Inventor

TRAPP SHANE J

US21 patents

⚠️ This page may combine multiple inventors who share the name “TRAPP SHANE J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TRAPP SHANE J

MICRON TECHNOLOGY INC

Self-aligned PECVD etch mask

Self-aligned PECVD etch mask

Method to eliminate striations and surface roughness caused by dry etch

Method to eliminate striations and surface roughness caused by dry etch

Method of forming integrated circuitry and method of forming shallow trench isolation in a semiconductor substrate

Method for forming a contact opening in a semiconductor device

Electronic devices comprising adjoining oxide materials and related systems

Semiconductor constructions

Methods of forming a pattern on a substrate

Method to reduce charge buildup during high aspect ratio contact etch

Electronic devices comprising adjoining oxide materials and related systems

Methods of forming an apparatus for making semiconductor dieves

Method to reduce charge buildup during high aspect ratio contact etch

Method of forming integrated circuitry, and method of forming a contact opening

Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate

Semiconductor constructions

Methods of forming openings into dielectric material

Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate

Integrated circuitry

Methods of forming a pattern on a substrate

SANDHU GURTEJ S

Method to reduce charge buildup during high aspect ratio contact etch