Inventor
KOO BON JAE
KR15 patents
⚠️ This page may combine multiple inventors who share the name “KOO BON JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS5959879ASep 28, 1999
Ferroelectric memory devices having well region word lines and methods of operating same
SAMSUNG ELECTRONICS CO LTD98 citations97
US6376325B1Apr 23, 2002
Method for fabricating a ferroelectric device
SAMSUNG ELECTRONICS CO LTD59 citations95
US6404001B2Jun 11, 2002
Multilevel conductive interconnections including capacitor electrodes for integrated circuit devices
SAMSUNG ELECTRONICS CO LTD36 citations92
US6368909B2Apr 9, 2002
Methods of fabricating integrated circuit ferroelectric capacitors including tensile stress applying layers on the upper electrode thereof
SAMSUNG ELECTRONICS CO LTD23 citations92
US6262446B1Jul 17, 2001
Methods of forming multilevel conductive interconnections including capacitor electrodes for integrated circuit devices
SAMSUNG ELECTRONICS CO LTD33 citations92
US6075264AJun 13, 2000
Structure of a ferroelectric memory cell and method of fabricating it
SAMSUNG ELECTRONICS CO LTD39 citations92
US7297997B2Nov 20, 2007
Semiconductor memory device with dual storage node and fabricating and operating methods thereof
SAMSUNG ELECTRONICS CO LTD14 citations84
US6337216B1Jan 8, 2002
Methods of forming ferroelectric memory cells
SAMSUNG ELECTRONICS CO LTD14 citations83
US6236588B1May 22, 2001
Nonvolatile ferroelectric random access memory device and a method of reading data thereof
SAMSUNG ELECTRONICS CO LTD16 citations83
US7294876B2Nov 13, 2007
FeRAM device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US5969982AOct 19, 1999
Ferroelectric memory devices having linear reference cells therein and methods of operating same
SAMSUNG ELECTRONICS CO LTD8 citations73
US7613027B2Nov 3, 2009
Semiconductor memory device with dual storage node and fabricating and operating methods thereof
SAMSUNG ELECTRONICS CO LTD1 citations52
US6034387AMar 7, 2000
Methods of operating ferroelectric memory devices having linear reference cells therein
SAMSUNG ELECTRONICS CO LTD1 citations51