Inventor

TZENG KUO-CHYUAN

TW44 patents

⚠️ This page may combine multiple inventors who share the name “TZENG KUO-CHYUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TZENG KUO-CHYUAN

TAIWAN SEMICONDUCTOR MFG

Method to integrate high performance 1T ram in a CMOS process using asymmetric structure

Microelectronic capacitor structure embedded within microelectronic isolation region

Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cell

Approach to integrate salicide gate for embedded DRAM devices

Capacitor circuit structure for determining overlay error

Embedded dual-port DRAM process

Approach for forming a buried stack capacitor structure featuring reduced polysilicon stringers

Decoupling MIM capacitor designs for interposers and methods of manufacture thereof

Common gate and salicide word line process for low cost embedded DRAM devices

One-transistor random access memory technology compatible with metal gate process

Capacitor circuit structure for determining overlay error

Memory cell structure with trench capacitor and method for fabrication thereof

Integrated process sequence allowing elimination of polysilicon residue and silicon damage during the fabrication of a buried stack capacitor structure in a SRAM cell

Method to define poly dog-bone for word line strapping contact at stitch area in embedded DRAM process

Embedded dual-port DRAM process

Metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layers

Decoupling MIM capacitor designs for interposers and methods of manufacture thereof

Method for depositing dielectric materials onto semiconductor substrates by HDP (high density plasma) CVD (chemical vapor deposition) processes without damage to FET active devices

Self-aligned etching method for forming high areal density patterned microelectronic structures

One-transistor random access memory technology compatible with metal gate process

Single transistor random access memory (1T-RAM) cell with dual threshold voltages

Metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layers

Method of fabricating metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layers

TAIWAN SEMICONDUCTOR MFG CO LTD

Self-aligned double patterning (SADP) method

Self-aligned double patterning process and semiconductor structure formed using thereof

Decoupling MIM capacitor designs for interposers and methods of manufacture thereof

Phase change memory device and method for manufacturing the same

Self-aligned double patterning process and semiconductor structure formed using thereof

Planarization-less phase change material switch

Bit line and word line connection for memory array

Bit line and word line connection for memory array

Bit line and word line connection for memory array

Self-aligned double patterning (SADP) method

Buffer layer in memory cell to prevent metal redeposition

Buffer layer in memory cell to prevent metal redeposition

Encapsulated phase change material switch and methods for forming the same

Phase change material switch with improved thermal confinement and methods for forming the same

Layout for reducing loading at line sockets and/or for increasing overlay tolerance while cutting lines

Memory arrays including continuous line-shaped random access memory strips and method forming same

TZENG KUO-CHYUAN

Method of manufacturing decoupling MIM capacitor designs for interposers

Method of fabricating metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layers

TAIWAN SEMICONDUCTOR MANUFACTO

Method for improving bit line to capacitor electrical failures on DRAM circuits using a wet etch-back to improve the bit-line-to-capacitor overlay margins

TU KUO-CHI

Semiconductor devices with orientation-free decoupling capacitors and methods of manufacture thereof

TAIWAN SEMICONDUCTOR MANUFACUTURING CO LTD

Semiconductor devices and methods for fabricating the same