Inventor

LIN JYH-NAN

TW14 patents

⚠️ This page may combine multiple inventors who share the name “LIN JYH-NAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

13 patents

US11315829B2Apr 26, 2022

Amorphous layers for reducing copper diffusion and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72

US11264467B2Mar 1, 2022

Semiconductor device having multi-layer diffusion barrier and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71

US10749004B2Aug 18, 2020

Semiconductor device having a multi-layer diffusion barrier and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US12148656B2Nov 19, 2024

Method of manufacturing semiconductor device and semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58

US11322397B2May 3, 2022

Method of manufacturing semiconductor devices including formation of adhesion enhancement layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58

US10978337B2Apr 13, 2021

Aluminum-containing layers and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56

US10373906B2Aug 6, 2019

Structure and formation method of interconnection structure of semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations56

TAIWAN SEMICONDUCTOR MFG

1 patent

US8946095B2Feb 3, 2015

Method of forming interlayer dielectric film above metal gate of semiconductor device

TAIWAN SEMICONDUCTOR MFG1 citations49

LIN JYH-NAN

TAIWAN SEMICONDUCTOR MFG CO LTD

Amorphous layers for reducing copper diffusion and method forming same

Semiconductor device having multi-layer diffusion barrier and method of making the same

Semiconductor device having a multi-layer diffusion barrier

Electron migration control in interconnect structures

Electron migration control in interconnect structures

Electron migration control in interconnect structures

Amorphous layers for reducing copper diffusion and method forming same

Amorphous layers for reducing copper diffusion and method forming same

Semiconductor device having a multi-layer diffusion barrier and method of making the same

Method of manufacturing semiconductor device and semiconductor devices

Method of manufacturing semiconductor devices including formation of adhesion enhancement layer

Aluminum-containing layers and methods of forming the same

Structure and formation method of interconnection structure of semiconductor device

TAIWAN SEMICONDUCTOR MFG

Method of forming interlayer dielectric film above metal gate of semiconductor device