Inventor
SEACRIST MICHAEL R
US21 patents
⚠️ This page may combine multiple inventors who share the name “SEACRIST MICHAEL R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALWAFERS CO LTD
10 patentsUS11532501B2Dec 20, 2022
Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
GLOBALWAFERS CO LTD1 citations72
US10943813B2Mar 9, 2021
Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
GLOBALWAFERS CO LTD2 citations72
US11289577B2Mar 29, 2022
Direct formation of hexagonal boron nitride on silicon based dielectrics
GLOBALWAFERS CO LTD1 citations71
US10658472B2May 19, 2020
Direct formation of hexagonal boron nitride on silicon based dielectrics
GLOBALWAFERS CO LTD1 citations71
US10796905B2Oct 6, 2020
Manufacture of group IIIA-nitride layers on semiconductor on insulator structures
GLOBALWAFERS CO LTD1 citations62
US11942360B2Mar 26, 2024
Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
GLOBALWAFERS CO LTD0 citations61
US11887885B2Jan 30, 2024
Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
GLOBALWAFERS CO LTD0 citations61
US11626318B2Apr 11, 2023
Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
GLOBALWAFERS CO LTD0 citations61
US11075109B2Jul 27, 2021
Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
GLOBALWAFERS CO LTD0 citations61
US11276759B2Mar 15, 2022
Direct formation of hexagonal boron nitride on silicon based dielectrics
GLOBALWAFERS CO LTD0 citations60
MEMC ELECTRONIC MATERIALS
3 patentsUS8884310B2Nov 11, 2014
Direct formation of graphene on semiconductor substrates
MEMC ELECTRONIC MATERIALS22 citations91
US9029228B2May 12, 2015
Direct and sequential formation of monolayers of boron nitride and graphene on substrates
MEMC ELECTRONIC MATERIALS24 citations89
US7566951B2Jul 28, 2009
Silicon structures with improved resistance to radiation events
MEMC ELECTRONIC MATERIALS0 citations41
SUNEDISON SEMICONDUCTOR LTD UEN201334164H
3 patentsUS9343533B2May 17, 2016
Direct formation of graphene on semiconductor substrates
SUNEDISON SEMICONDUCTOR LTD UEN201334164H6 citations82
US9355842B2May 31, 2016
Direct and sequential formation of monolayers of boron nitride and graphene on substrates
SUNEDISON SEMICONDUCTOR LTD UEN201334164H9 citations80
US10573517B2Feb 25, 2020
Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt
SUNEDISON SEMICONDUCTOR LTD UEN201334164H3 citations71
SEACRIST MICHAEL R
3 patentsUS8865601B2Oct 21, 2014
Methods for preparing a semiconductor wafer with high thermal conductivity
SEACRIST MICHAEL R0 citations48
US8080482B2Dec 20, 2011
Methods for preparing a semiconductor structure for use in backside illumination applications
SEACRIST MICHAEL R0 citations48
US9029854B2May 12, 2015
Bulk silicon wafer product useful in the manufacture of three dimensional multigate MOSFETs
SEACRIST MICHAEL R0 citations37