P

Inventor

HSU CHIH-YU

TW35 patents
⚠️ This page may combine multiple inventors who share the name “HSU CHIH-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

22 patents
US9953975B2Apr 24, 2018

Methods for forming STI regions in integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations82
US11996484B2May 28, 2024

Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12255104B2Mar 18, 2025

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations74
US12040405B2Jul 16, 2024

Multi-gate device and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US9472672B2Oct 18, 2016

Eliminating fin mismatch using isolation last

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US12142657B2Nov 12, 2024

Gate structure for multi-gate device and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations69
US12294030B2May 6, 2025

Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12463040B2Nov 4, 2025

Methods for doping high-K metal gates for tuning threshold voltages

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302604B2May 13, 2025

Multi-gate device and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272557B2Apr 8, 2025

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12171091B2Dec 17, 2024

Multi-layer high-k gate dielectric structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12041760B2Jul 16, 2024

Multi-layer high-k gate dielectric structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040235B2Jul 16, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862468B2Jan 2, 2024

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11450661B2Sep 20, 2022

Forming STI regions to separate semiconductor Fins

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11437280B2Sep 6, 2022

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342188B2May 24, 2022

Methods for doping high-k metal gates for tuning threshold voltages

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12433011B2Sep 30, 2025

Post gate dielectric processing for semiconductor device fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11735484B2Aug 22, 2023

Post gate dielectric processing for semiconductor device fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12074206B2Aug 27, 2024

Integrated circuit device with improved reliability

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12022643B2Jun 25, 2024

Multi-layer high-k gate dielectric structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12453165B2Oct 21, 2025

P-type semiconductor devices with different threshold voltages and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50

REALTEK SEMICONDUCTOR CORP

5 patents

AIR LIQUIDE

3 patents

CHIA LIN SPORT CO LTD

2 patents

HUANG LEE-MAY

1 patent

NATIONAL YANG-MING UNIV

1 patent

LAIR LIQUIDE SA POUR LETUDE ET LEXPLOITATION DES PROCEDES GEORGES CLUADEQ

1 patent