Inventor
NGWAN VOON CHENG
SG4 patents
Patents
4 patentsUS11502192B2Nov 15, 2022
Monolithic charge coupled field effect rectifier embedded in a charge coupled field effect transistor
ST MICROELECTRONICS PTE LTD2 citations62
US12439621B2Oct 7, 2025
Method of making a charge coupled field effect rectifier diode
ST MICROELECTRONICS PTE LTD1 citations56
US11848378B2Dec 19, 2023
Split-gate trench power MOSFET with self-aligned poly-to-poly isolation
ST MICROELECTRONICS PTE LTD0 citations43
US12224342B2Feb 11, 2025
Gate contact structure for a trench power MOSFET with a split gate configuration
ST MICROELECTRONICS PTE LTD0 citations40