Inventor
RAGHUNATHAN SHYAM SUNDER
SG18 patents
⚠️ This page may combine multiple inventors who share the name “RAGHUNATHAN SHYAM SUNDER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
10 patentsUS9396791B2Jul 19, 2016
Programming memories with multi-level pass signal
MICRON TECHNOLOGY INC12 citations84
US10043574B2Aug 7, 2018
Programming memories with multi-level pass signal
MICRON TECHNOLOGY INC3 citations73
US9922704B2Mar 20, 2018
Programming memories with multi-level pass signal
MICRON TECHNOLOGY INC2 citations73
US12087372B2Sep 10, 2024
Partial block erase operations in memory devices
MICRON TECHNOLOGY INC0 citations57
US12205653B2Jan 21, 2025
Wordline or pillar state detection for faster read access times
MICRON TECHNOLOGY INC0 citations52
US11762767B2Sep 19, 2023
Storing highly read data at low impact read disturb pages of a memory device
MICRON TECHNOLOGY INC0 citations52
US12530287B2Jan 20, 2026
Read disturb tracking among multiple erase blocks coupled to a same string
MICRON TECHNOLOGY INC0 citations51
US12542188B2Feb 3, 2026
Boost-by-deck during a program operation on a memory device
MICRON TECHNOLOGY INC0 citations50
US12530288B2Jan 20, 2026
Read disturb tracking among multiple erase blocks coupled to a same string
MICRON TECHNOLOGY INC0 citations46
US12224016B2Feb 11, 2025
Transient and stable state read operations of a memory device
MICRON TECHNOLOGY INC0 citations45
INTEL CORP
6 patentsUS9418000B2Aug 16, 2016
Dynamically compensating for degradation of a non-volatile memory device
INTEL CORP9 citations84
US9245645B2Jan 26, 2016
Multi-pulse programming for memory
INTEL CORP8 citations84
US9099183B2Aug 4, 2015
Program VT spread folding for NAND flash memory programming
INTEL CORP9 citations84
US9535777B2Jan 3, 2017
Defect management policies for NAND flash memory
INTEL CORP3 citations73
US10658053B2May 19, 2020
Ramping inhibit voltage during memory programming
INTEL CORP0 citations52
US9792997B2Oct 17, 2017
Ramping inhibit voltage during memory programming
INTEL CORP0 citations52