Inventor
SALZMAN JAMES FRED
US19 patents
⚠️ This page may combine multiple inventors who share the name “SALZMAN JAMES FRED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
17 patentsUS9281232B2Mar 8, 2016
Device having improved radiation hardness and high breakdown voltages
TEXAS INSTRUMENTS INC6 citations83
US7453142B2Nov 18, 2008
System and method for implementing transformer on package substrate
TEXAS INSTRUMENTS INC16 citations83
US9281245B2Mar 8, 2016
Latchup reduction by grown orthogonal substrates
TEXAS INSTRUMENTS INC7 citations80
US10600753B2Mar 24, 2020
Flip chip backside mechanical die grounding techniques
TEXAS INSTRUMENTS INC2 citations72
US9741791B2Aug 22, 2017
Latchup reduction by grown orthogonal substrates
TEXAS INSTRUMENTS INC2 citations69
US11574887B2Feb 7, 2023
Flip chip backside mechanical die grounding techniques
TEXAS INSTRUMENTS INC1 citations62
US11043467B2Jun 22, 2021
Flip chip backside die grounding techniques
TEXAS INSTRUMENTS INC1 citations62
US10607958B2Mar 31, 2020
Flip chip backside die grounding techniques
TEXAS INSTRUMENTS INC1 citations62
US9079002B1Jul 14, 2015
Ceramic nanochannel drug delivery device and method of formation
TEXAS INSTRUMENTS INC2 citations62
US11056490B2Jul 6, 2021
Process enhancement using double sided epitaxial on substrate
TEXAS INSTRUMENTS INC0 citations60
US10002870B2Jun 19, 2018
Process enhancement using double sided epitaxial on substrate
TEXAS INSTRUMENTS INC1 citations60
US9653544B2May 16, 2017
Methods for fabricating radiation hardened MOS devices
TEXAS INSTRUMENTS INC0 citations51
US9620586B2Apr 11, 2017
Device having improved radiation hardness and high breakdown voltages
TEXAS INSTRUMENTS INC0 citations51
US10304827B2May 28, 2019
Process enhancement using double sided epitaxial on substrate
TEXAS INSTRUMENTS INC0 citations50
US10043867B2Aug 7, 2018
Latchup reduction by grown orthogonal substrates
TEXAS INSTRUMENTS INC0 citations48
US12426286B2Sep 23, 2025
Radiation enhanced bipolar transistor
TEXAS INSTRUMENTS INC0 citations40
US9006864B2Apr 14, 2015
Radiation induced diode structure
TEXAS INSTRUMENTS INC0 citations30