Inventor
LYNCH WILLIAM T
US34 patents
⚠️ This page may combine multiple inventors who share the name “LYNCH WILLIAM T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AT & T BELL LAB
15 patentsUS4914500AApr 3, 1990
Method for fabricating semiconductor devices which include sources and drains having metal-containing material regions, and the resulting devices
AT & T BELL LAB58 citations95
US4485550ADec 4, 1984
Fabrication of schottky-barrier MOS FETs
AT & T BELL LAB129 citations94
US5304834AApr 19, 1994
Selective epitaxy of silicon in silicon dioxide apertures with suppression of unwanted formation of facets
AT & T BELL LAB32 citations92
US4992394AFeb 12, 1991
Self aligned registration marks for integrated circuit fabrication
AT & T BELL LAB32 citations92
US4914502AApr 3, 1990
Laterally marching interconnecting lines in semiconductor intergrated circuits
AT & T BELL LAB41 citations92
US4453306AJun 12, 1984
Fabrication of FETs
AT & T BELL LAB36 citations92
US4471524ASep 18, 1984
Method for manufacturing an insulated gate field effect transistor device
AT & T BELL LAB22 citations81
US5212112AMay 18, 1993
Selective epitaxy of silicon in silicon dioxide apertures with suppression of unwanted formation of facets
AT & T BELL LAB12 citations74
US4646123AFeb 24, 1987
Latchup-preventing CMOS device
AT & T BELL LAB8 citations74
US4643804AFeb 17, 1987
Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices
AT & T BELL LAB14 citations74
US5057455AOct 15, 1991
Formation of integrated circuit electrodes
AT & T BELL LAB18 citations73
US4996576AFeb 26, 1991
Radiation-sensitive device
AT & T BELL LAB12 citations73
US4514893AMay 7, 1985
Fabrication of FETs
AT & T BELL LAB11 citations73
US5063422ANov 5, 1991
Devices having shallow junctions
AT & T BELL LAB7 citations72
US4647957AMar 3, 1987
Latchup-preventing CMOS device
AT & T BELL LAB17 citations72
AMERICAN TELEPHONE & TELEGRAPH
9 patentsUS4896108AJan 23, 1990
Test circuit for measuring specific contact resistivity of self-aligned contacts in integrated circuits
AMERICAN TELEPHONE & TELEGRAPH61 citations95
US4766090AAug 23, 1988
Methods for fabricating latchup-preventing CMOS device
AMERICAN TELEPHONE & TELEGRAPH56 citations94
US4822754AApr 18, 1989
Fabrication of FETs with source and drain contacts aligned with the gate electrode
AMERICAN TELEPHONE & TELEGRAPH24 citations92
US4825278AApr 25, 1989
Radiation hardened semiconductor devices
AMERICAN TELEPHONE & TELEGRAPH50 citations91
US4824796AApr 25, 1989
Process for manufacturing semiconductor BICMOS device
AMERICAN TELEPHONE & TELEGRAPH32 citations90
US4656730AApr 14, 1987
Method for fabricating CMOS devices
AMERICAN TELEPHONE & TELEGRAPH19 citations82
US4694561ASep 22, 1987
Method of making high-performance trench capacitors for DRAM cells
AMERICAN TELEPHONE & TELEGRAPH23 citations81
US4794091ADec 27, 1988
Method of making high-performance dram arrays including trench capacitors
AMERICAN TELEPHONE & TELEGRAPH9 citations74
US4665414AMay 12, 1987
Schottky-barrier MOS devices
AMERICAN TELEPHONE & TELEGRAPH16 citations71