Inventor
ITOH HIROMI
JP19 patents
⚠️ This page may combine multiple inventors who share the name “ITOH HIROMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
13 patentsUS5572052ANov 5, 1996
Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
MITSUBISHI ELECTRIC CORP221 citations99
US5174881ADec 29, 1992
Apparatus for forming a thin film on surface of semiconductor substrate
MITSUBISHI ELECTRIC CORP448 citations98
US5567964AOct 22, 1996
Semiconductor device
MITSUBISHI ELECTRIC CORP59 citations96
US5519237AMay 21, 1996
Semiconductor memory device
MITSUBISHI ELECTRIC CORP43 citations96
US5470799ANov 28, 1995
Method for pretreating semiconductor substrate by photochemically removing native oxide
MITSUBISHI ELECTRIC CORP54 citations96
US5382817AJan 17, 1995
Semiconductor device having a ferroelectric capacitor with a planarized lower electrode
MITSUBISHI ELECTRIC CORP98 citations96
US5693553ADec 2, 1997
Semiconductor device and manufacturing method of the same
MITSUBISHI ELECTRIC CORP25 citations92
US5429991AJul 4, 1995
Method of forming thin film for semiconductor device
MITSUBISHI ELECTRIC CORP39 citations92
US5240505AAug 31, 1993
Method of an apparatus for forming thin film for semiconductor device
MITSUBISHI ELECTRIC CORP21 citations92
US5972748AOct 26, 1999
Semiconductor memory device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP7 citations74
US5753527AMay 19, 1998
Method of manufacturing a semiconductor memory device
MITSUBISHI ELECTRIC CORP13 citations74
US4839196AJun 13, 1989
Photochemical film-forming method
MITSUBISHI ELECTRIC CORP9 citations74
US4732793AMar 22, 1988
Method and apparatus for laser-induced CVD
MITSUBISHI ELECTRIC CORP9 citations74
FUJITSU LTD
2 patentsUS4883020ANov 28, 1989
Apparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductor
FUJITSU LTD21 citations79
US5070815ADec 10, 1991
MOCVD device for growing a semiconductor layer by the metal-organic chemical vapor deposition process
FUJITSU LTD14 citations73