Inventor
MATSUBARA YOSHIHISA
JP66 patents
⚠️ This page may combine multiple inventors who share the name “MATSUBARA YOSHIHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
33 patentsUS6492735B1Dec 10, 2002
Semiconductor device with alloy film between barrier metal and interconnect
NEC CORP47 citations96
US6091081AJul 18, 2000
Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film
NEC CORP55 citations96
US6037625AMar 14, 2000
Semiconductor device with salicide structure and fabrication method thereof
NEC CORP76 citations96
US6277735B1Aug 21, 2001
Method for forming a refractory metal silicide layer
NEC CORP22 citations93
US6096638AAug 1, 2000
Method for forming a refractory metal silicide layer
NEC CORP17 citations93
US6037250AMar 14, 2000
Process for forming multilevel interconnection structure
NEC CORP20 citations93
US5580826ADec 3, 1996
Process for forming a planarized interlayer insulating film in a semiconductor device using a periodic resist pattern
NEC CORP19 citations93
US5569618AOct 29, 1996
Method for planarizing insulating film
NEC CORP25 citations93
US5563100AOct 8, 1996
Fabrication method of semiconductor device with refractory metal silicide formation by removing native oxide in hydrogen
NEC CORP41 citations93
US6379782B2Apr 30, 2002
Semiconductor device formed with metal wiring on a wafer by chemical mechanical polishing, and method of manufacturing the same
NEC CORP21 citations92
US6309970B1Oct 30, 2001
Method of forming multi-level copper interconnect with formation of copper oxide on exposed copper surface
NEC CORP36 citations92
US6149730ANov 21, 2000
Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
NEC CORP50 citations92
US5897365AApr 27, 1999
Process of fabricating semiconductor device having low-resistive titanium silicide layer free from short-circuit and leakage current
NEC CORP18 citations84
US6936926B2Aug 30, 2005
Wiring structure in a semiconductor device
NEC CORP8 citations74
US6514853B1Feb 4, 2003
Semiconductor device and a manufacturing process therefor
NEC CORP12 citations74
US6329295B1Dec 11, 2001
Semiconductor device capable of having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material and method of manufacturing the same
NEC CORP5 citations74
US6297094B1Oct 2, 2001
Semiconductor device with salicide structure and fabrication method thereof
NEC CORP8 citations74
US6274417B1Aug 14, 2001
Method of forming a semiconductor device
NEC CORP10 citations74
US6271594B1Aug 7, 2001
Semiconductor device and method of manufacturing the same
NEC CORP9 citations74
US6241859B1Jun 5, 2001
Method of forming a self-aligned refractory metal silicide layer
NEC CORP7 citations74
US6127267AOct 3, 2000
Fabrication method of semiconductor device equipped with silicide layer
NEC CORP14 citations74
US6104092AAug 15, 2000
Semiconductor device having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material
NEC CORP13 citations74
US6040240AMar 21, 2000
Method for forming interconnection structure
NEC CORP12 citations74
US5963829AOct 5, 1999
Method of forming silicide film
NEC CORP8 citations74
US5883003AMar 16, 1999
Method for producing a semiconductor device comprising a refractory metal silicide layer
NEC CORP13 citations74
US5877085AMar 2, 1999
Method of manufacturing semiconductor device
NEC CORP9 citations74
US5587590ADec 24, 1996
Test piece for X-ray inspection
NEC CORP8 citations74
US6372628B1Apr 16, 2002
Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device
NEC CORP11 citations73
US6268090B1Jul 31, 2001
Process for manufacturing semiconductor device and exposure mask
NEC CORP14 citations73
US6458690B2Oct 1, 2002
Method for manufacturing a multilayer interconnection structure
NEC CORP6 citations63
US6048760AApr 11, 2000
Method of forming a self-aligned refractory metal silicide contact using doped field oxide regions
NEC CORP3 citations63
US5953632ASep 14, 1999
Method for manufacturing semiconductor device comprising a silicide film
NEC CORP2 citations63
US5918036AJun 29, 1999
Simulation method of silicide reaction for use with production of semiconductor devices
NEC CORP2 citations63
NEC ELECTRONICS CORP
6 patentsUS6573607B2Jun 3, 2003
Semiconductor device and manufacturing method thereof
NEC ELECTRONICS CORP17 citations92
US7365431B2Apr 29, 2008
Semiconductor device having multilayer structure and method for manufacturing thereof
NEC ELECTRONICS CORP17 citations84
US7148575B2Dec 12, 2006
Semiconductor device having bonding pad above low-k dielectric film
NEC ELECTRONICS CORP9 citations74
US6890852B2May 10, 2005
Semiconductor device and manufacturing method of the same
NEC ELECTRONICS CORP9 citations74
US6607978B2Aug 19, 2003
Method of making a semiconductor device with alloy film between barrier metal and interconnect
NEC ELECTRONICS CORP3 citations63
US6555911B1Apr 29, 2003
Semiconductor device and method of manufacturing interconnections thereof using copper and tungsten in predetermined ratios
NEC ELECTRONICS CORP4 citations63
RENESAS ELECTRONICS CORP
6 patentsUS7986012B2Jul 26, 2011
Semiconductor device and process for manufacturing same
RENESAS ELECTRONICS CORP8 citations84
US10418323B2Sep 17, 2019
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP3 citations73
US10411025B2Sep 10, 2019
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP2 citations73
US9837335B2Dec 5, 2017
Semiconductor device
RENESAS ELECTRONICS CORP2 citations73
US8802562B2Aug 12, 2014
Semiconductor device including copper wiring and via wiring having length longer than width thereof and method of manufacturing the same
RENESAS ELECTRONICS CORP2 citations63
US7989952B2Aug 2, 2011
Semiconductor device
RENESAS ELECTRONICS CORP3 citations63
MATSUBARA YOSHIHISA
3 patentsUS8193582B2Jun 5, 2012
Semiconductor device and method of manufacturing the same
MATSUBARA YOSHIHISA13 citations84
US8664010B2Mar 4, 2014
Semiconductor device and manufacturing method of the semiconductor device
MATSUBARA YOSHIHISA2 citations62
US8519389B2Aug 27, 2013
Semiconductor device, method of manufacturing the same, and method of designing the same
MATSUBARA YOSHIHISA3 citations62
RENESAS TECH CORP
1 patentOHNISHI SHINTARO
1 patentShowing the top 50 of 66 patents by PatentIndex Score.