P

Inventor

MATSUBARA YOSHIHISA

JP66 patents
⚠️ This page may combine multiple inventors who share the name “MATSUBARA YOSHIHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

33 patents
US6492735B1Dec 10, 2002

Semiconductor device with alloy film between barrier metal and interconnect

NEC CORP47 citations96
US6091081AJul 18, 2000

Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film

NEC CORP55 citations96
US6037625AMar 14, 2000

Semiconductor device with salicide structure and fabrication method thereof

NEC CORP76 citations96
US6277735B1Aug 21, 2001

Method for forming a refractory metal silicide layer

NEC CORP22 citations93
US6096638AAug 1, 2000

Method for forming a refractory metal silicide layer

NEC CORP17 citations93
US6037250AMar 14, 2000

Process for forming multilevel interconnection structure

NEC CORP20 citations93
US5580826ADec 3, 1996

Process for forming a planarized interlayer insulating film in a semiconductor device using a periodic resist pattern

NEC CORP19 citations93
US5569618AOct 29, 1996

Method for planarizing insulating film

NEC CORP25 citations93
US5563100AOct 8, 1996

Fabrication method of semiconductor device with refractory metal silicide formation by removing native oxide in hydrogen

NEC CORP41 citations93
US6379782B2Apr 30, 2002

Semiconductor device formed with metal wiring on a wafer by chemical mechanical polishing, and method of manufacturing the same

NEC CORP21 citations92
US6309970B1Oct 30, 2001

Method of forming multi-level copper interconnect with formation of copper oxide on exposed copper surface

NEC CORP36 citations92
US6149730ANov 21, 2000

Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor

NEC CORP50 citations92
US5897365AApr 27, 1999

Process of fabricating semiconductor device having low-resistive titanium silicide layer free from short-circuit and leakage current

NEC CORP18 citations84
US6936926B2Aug 30, 2005

Wiring structure in a semiconductor device

NEC CORP8 citations74
US6514853B1Feb 4, 2003

Semiconductor device and a manufacturing process therefor

NEC CORP12 citations74
US6329295B1Dec 11, 2001

Semiconductor device capable of having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material and method of manufacturing the same

NEC CORP5 citations74
US6297094B1Oct 2, 2001

Semiconductor device with salicide structure and fabrication method thereof

NEC CORP8 citations74
US6274417B1Aug 14, 2001

Method of forming a semiconductor device

NEC CORP10 citations74
US6271594B1Aug 7, 2001

Semiconductor device and method of manufacturing the same

NEC CORP9 citations74
US6241859B1Jun 5, 2001

Method of forming a self-aligned refractory metal silicide layer

NEC CORP7 citations74
US6127267AOct 3, 2000

Fabrication method of semiconductor device equipped with silicide layer

NEC CORP14 citations74
US6104092AAug 15, 2000

Semiconductor device having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material

NEC CORP13 citations74
US6040240AMar 21, 2000

Method for forming interconnection structure

NEC CORP12 citations74
US5963829AOct 5, 1999

Method of forming silicide film

NEC CORP8 citations74
US5883003AMar 16, 1999

Method for producing a semiconductor device comprising a refractory metal silicide layer

NEC CORP13 citations74
US5877085AMar 2, 1999

Method of manufacturing semiconductor device

NEC CORP9 citations74
US5587590ADec 24, 1996

Test piece for X-ray inspection

NEC CORP8 citations74
US6372628B1Apr 16, 2002

Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device

NEC CORP11 citations73
US6268090B1Jul 31, 2001

Process for manufacturing semiconductor device and exposure mask

NEC CORP14 citations73
US6458690B2Oct 1, 2002

Method for manufacturing a multilayer interconnection structure

NEC CORP6 citations63
US6048760AApr 11, 2000

Method of forming a self-aligned refractory metal silicide contact using doped field oxide regions

NEC CORP3 citations63
US5953632ASep 14, 1999

Method for manufacturing semiconductor device comprising a silicide film

NEC CORP2 citations63
US5918036AJun 29, 1999

Simulation method of silicide reaction for use with production of semiconductor devices

NEC CORP2 citations63

NEC ELECTRONICS CORP

6 patents

RENESAS ELECTRONICS CORP

6 patents

MATSUBARA YOSHIHISA

3 patents

RENESAS TECH CORP

1 patent

OHNISHI SHINTARO

1 patent

Showing the top 50 of 66 patents by PatentIndex Score.