P

Inventor

SOHN WOONG-HEE

KR27 patents
⚠️ This page may combine multiple inventors who share the name “SOHN WOONG-HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

23 patents
US7214620B2May 8, 2007

Methods of forming silicide films with metal films in semiconductor devices and contacts including the same

SAMSUNG ELECTRONICS CO LTD26 citations92
US9178039B2Nov 3, 2015

Semiconductor device

SAMSUNG ELECTRONICS CO LTD18 citations84
US7696552B2Apr 13, 2010

Semiconductor devices including high-k dielectric materials

SAMSUNG ELECTRONICS CO LTD12 citations84
US7521316B2Apr 21, 2009

Methods of forming gate structures for semiconductor devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US7172967B2Feb 6, 2007

Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same

SAMSUNG ELECTRONICS CO LTD19 citations84
US9184178B2Nov 10, 2015

Vertical memory devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US7534709B2May 19, 2009

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD12 citations82
US7547942B2Jun 16, 2009

Nonvolatile memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7371669B2May 13, 2008

Method of forming a gate of a semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations74
US10103152B2Oct 16, 2018

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations71
US8034701B2Oct 11, 2011

Methods of forming recessed gate electrodes having covered layer interfaces

SAMSUNG ELECTRONICS CO LTD3 citations63
US7875939B2Jan 25, 2011

Semiconductor device including an ohmic layer

SAMSUNG ELECTRONICS CO LTD2 citations63
US7772637B2Aug 10, 2010

Semiconductor devices including gate structures and leakage barrier oxides

SAMSUNG ELECTRONICS CO LTD3 citations63
US7759263B2Jul 20, 2010

Methods for fabricating improved gate dielectrics

SAMSUNG ELECTRONICS CO LTD5 citations63
US7582931B2Sep 1, 2009

Recessed gate electrodes having covered layer interfaces and methods of forming the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7550353B2Jun 23, 2009

Method of forming semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations63
US7544597B2Jun 9, 2009

Method of forming a semiconductor device including an ohmic layer

SAMSUNG ELECTRONICS CO LTD3 citations63
US7238612B2Jul 3, 2007

Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US10373831B2Aug 6, 2019

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations61
US7879737B2Feb 1, 2011

Methods for fabricating improved gate dielectrics

SAMSUNG ELECTRONICS CO LTD0 citations52
US7666786B2Feb 23, 2010

Methods of fabricating semiconductor devices having a double metal salicide layer

SAMSUNG ELECTRONICS CO LTD0 citations52
US7312150B2Dec 25, 2007

Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD0 citations42
US7897500B2Mar 1, 2011

Methods for forming silicide conductors using substrate masking

SAMSUNG ELECTRONICS CO LTD0 citations41

JUNG EUN-JI

2 patents

JANG KYUNG-TAE

1 patent

SOHN WOONG-HEE

1 patent