Inventor
SOHN WOONG-HEE
KR27 patents
⚠️ This page may combine multiple inventors who share the name “SOHN WOONG-HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
23 patentsUS7214620B2May 8, 2007
Methods of forming silicide films with metal films in semiconductor devices and contacts including the same
SAMSUNG ELECTRONICS CO LTD26 citations92
US9178039B2Nov 3, 2015
Semiconductor device
SAMSUNG ELECTRONICS CO LTD18 citations84
US7696552B2Apr 13, 2010
Semiconductor devices including high-k dielectric materials
SAMSUNG ELECTRONICS CO LTD12 citations84
US7521316B2Apr 21, 2009
Methods of forming gate structures for semiconductor devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US7172967B2Feb 6, 2007
Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same
SAMSUNG ELECTRONICS CO LTD19 citations84
US9184178B2Nov 10, 2015
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations83
US7534709B2May 19, 2009
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD12 citations82
US7547942B2Jun 16, 2009
Nonvolatile memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7371669B2May 13, 2008
Method of forming a gate of a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations74
US10103152B2Oct 16, 2018
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations71
US8034701B2Oct 11, 2011
Methods of forming recessed gate electrodes having covered layer interfaces
SAMSUNG ELECTRONICS CO LTD3 citations63
US7875939B2Jan 25, 2011
Semiconductor device including an ohmic layer
SAMSUNG ELECTRONICS CO LTD2 citations63
US7772637B2Aug 10, 2010
Semiconductor devices including gate structures and leakage barrier oxides
SAMSUNG ELECTRONICS CO LTD3 citations63
US7759263B2Jul 20, 2010
Methods for fabricating improved gate dielectrics
SAMSUNG ELECTRONICS CO LTD5 citations63
US7582931B2Sep 1, 2009
Recessed gate electrodes having covered layer interfaces and methods of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7550353B2Jun 23, 2009
Method of forming semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations63
US7544597B2Jun 9, 2009
Method of forming a semiconductor device including an ohmic layer
SAMSUNG ELECTRONICS CO LTD3 citations63
US7238612B2Jul 3, 2007
Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US10373831B2Aug 6, 2019
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations61
US7879737B2Feb 1, 2011
Methods for fabricating improved gate dielectrics
SAMSUNG ELECTRONICS CO LTD0 citations52
US7666786B2Feb 23, 2010
Methods of fabricating semiconductor devices having a double metal salicide layer
SAMSUNG ELECTRONICS CO LTD0 citations52
US7312150B2Dec 25, 2007
Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations42
US7897500B2Mar 1, 2011
Methods for forming silicide conductors using substrate masking
SAMSUNG ELECTRONICS CO LTD0 citations41