Inventor
FRASER DAVID B
37 patents
⚠️ This page may combine multiple inventors who share the name “FRASER DAVID B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
31 patentsUS6790704B2Sep 14, 2004
Method for capacitively coupling electronic devices
INTEL CORP188 citations99
US5817572AOct 6, 1998
Method for forming multileves interconnections for semiconductor fabrication
INTEL CORP242 citations99
US5783478AJul 21, 1998
Method of frabricating a MOS transistor having a composite gate electrode
INTEL CORP157 citations99
US5739579AApr 14, 1998
Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections
INTEL CORP427 citations99
US5625217AApr 29, 1997
MOS transistor having a composite gate electrode and method of fabrication
INTEL CORP162 citations99
US5350484ASep 27, 1994
Method for the anisotropic etching of metal films in the fabrication of interconnects
INTEL CORP275 citations99
US5858843AJan 12, 1999
Low temperature method of forming gate electrode and gate dielectric
INTEL CORP120 citations98
US5612254AMar 18, 1997
Methods of forming an interconnect on a semiconductor substrate
INTEL CORP478 citations98
US6303464B1Oct 16, 2001
Method and structure for reducing interconnect system capacitance through enclosed voids in a dielectric layer
INTEL CORP87 citations96
US5886410AMar 23, 1999
Interconnect structure with hard mask and low dielectric constant materials
INTEL CORP110 citations96
US5861340AJan 19, 1999
Method of forming a polycide film
INTEL CORP61 citations96
US5818092AOct 6, 1998
Polycide film
INTEL CORP77 citations96
US5714418AFeb 3, 1998
Diffusion barrier for electrical interconnects in an integrated circuit
INTEL CORP84 citations96
US5536684AJul 16, 1996
Process for formation of epitaxial cobalt silicide and shallow junction of silicon
INTEL CORP56 citations96
US6309956B1Oct 30, 2001
Fabricating low K dielectric interconnect systems by using dummy structures to enhance process
INTEL CORP138 citations95
US5047367ASep 10, 1991
Process for formation of a self aligned titanium nitride/cobalt silicide bilayer
INTEL CORP138 citations95
US6027995AFeb 22, 2000
Method for fabricating an interconnect structure with hard mask and low dielectric constant materials
INTEL CORP59 citations94
US6998357B2Feb 14, 2006
High dielectric constant metal oxide gate dielectrics
INTEL CORP13 citations93
US6777320B1Aug 17, 2004
In-plane on-chip decoupling capacitors and method for making same
INTEL CORP29 citations93
US6528856B1Mar 4, 2003
High dielectric constant metal oxide gate dielectrics
INTEL CORP22 citations93
US6310400B1Oct 30, 2001
Apparatus for capacitively coupling electronic devices
INTEL CORP23 citations93
US6239019B1May 29, 2001
Interconnect structure using a combination of hard dielectric and polymer as interlayer dielectrics
INTEL CORP17 citations93
US6040628AMar 21, 2000
Interconnect structure using a combination of hard dielectric and polymer as interlayer dielectrics
INTEL CORP36 citations93
US5880030AMar 9, 1999
Unlanded via structure and method for making same
INTEL CORP30 citations92
US4966868AOct 30, 1990
Process for selective contact hole filling including a silicide plug
INTEL CORP49 citations91
US6501065B1Dec 31, 2002
Image sensor using a thin film photodiode above active CMOS circuitry
INTEL CORP39 citations90
US6037249AMar 14, 2000
Method for forming air gaps for advanced interconnect systems
INTEL CORP48 citations89
US6709885B2Mar 23, 2004
Method of fabricating image sensors using a thin film photodiode above active CMOS circuitry
INTEL CORP14 citations82
US5977634ANov 2, 1999
Diffusion barrier for electrical interconnects in an integrated circuit
INTEL CORP8 citations74
US6949831B2Sep 27, 2005
In-plane on-chip decoupling capacitors and method for making same
INTEL CORP2 citations63
US6689702B2Feb 10, 2004
High dielectric constant metal oxide gate dielectrics
INTEL CORP1 citations63
BELL TELEPHONE LABOR INC
5 patentsUS4244799AJan 13, 1981
Fabrication of integrated circuits utilizing thick high-resolution patterns
BELL TELEPHONE LABOR INC63 citations96
US4362597ADec 7, 1982
Method of fabricating high-conductivity silicide-on-polysilicon structures for MOS devices
BELL TELEPHONE LABOR INC43 citations92
US4337476AJun 29, 1982
Silicon rich refractory silicides as gate metal
BELL TELEPHONE LABOR INC48 citations92
US4400867AAug 30, 1983
High conductivity metallization for semiconductor integrated circuits
BELL TELEPHONE LABOR INC13 citations74
US4407933AOct 4, 1983
Alignment marks for electron beam lithography
BELL TELEPHONE LABOR INC14 citations72