Inventor
Wang pei-lun
TW25 patents
⚠️ This page may combine multiple inventors who share the name “Wang pei-lun”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
19 patentsUS9590053B2Mar 7, 2017
Methodology and structure for field plate design
TAIWAN SEMICONDUCTOR MFG CO LTD27 citations93
US9666574B1May 30, 2017
Semiconductor device structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10756208B2Aug 25, 2020
Integrated chip and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US10636904B2Apr 28, 2020
Methodology and structure for field plate design
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US9954097B2Apr 24, 2018
Methodology and structure for field plate design
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9954100B2Apr 24, 2018
Method and apparatus for high voltate transistors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11508843B1Nov 22, 2022
Semiconductor device having fully oxidized gate oxide layer and method for making the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11335784B2May 17, 2022
Field plate structure for high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11164970B2Nov 2, 2021
Contact field plate
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US10964810B2Mar 30, 2021
Methodology and structure for field plate design
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10861946B1Dec 8, 2020
Field plate structure for high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9634154B1Apr 25, 2017
Schottky diode having a well with peripherial cathod regions and center andoe region
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12249629B2Mar 11, 2025
Field plate structure for high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990545B2May 21, 2024
Semiconductor device having fully oxidized gate oxide layer and method for making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11271104B2Mar 8, 2022
Composite etch stop layer for contact field plate etching
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10319719B2Jun 11, 2019
Semiconductor device structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12132108B2Oct 29, 2024
Dual gate structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11894459B2Feb 6, 2024
Dual gate structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12520521B2Jan 6, 2026
Method of forming high voltage transistor and structure resulting therefrom
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
WANG PEI LUN
5 patentsUSD826171SAug 21, 2018
Connector
WANG PEI LUN5 citations69
US9923321B2Mar 20, 2018
Composite connection socket
WANG PEI LUN2 citations69
US9905967B2Feb 27, 2018
Socket outlet with expansion module
WANG PEI LUN2 citations69
US10276839B2Apr 30, 2019
Rechargeable battery
WANG PEI LUN0 citations38
US10050371B2Aug 14, 2018
Composite connection socket
WANG PEI LUN0 citations38