P

Inventor

Wang pei-lun

TW25 patents
⚠️ This page may combine multiple inventors who share the name “Wang pei-lun”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

19 patents
US9590053B2Mar 7, 2017

Methodology and structure for field plate design

TAIWAN SEMICONDUCTOR MFG CO LTD27 citations93
US9666574B1May 30, 2017

Semiconductor device structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10756208B2Aug 25, 2020

Integrated chip and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US10636904B2Apr 28, 2020

Methodology and structure for field plate design

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US9954097B2Apr 24, 2018

Methodology and structure for field plate design

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9954100B2Apr 24, 2018

Method and apparatus for high voltate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11508843B1Nov 22, 2022

Semiconductor device having fully oxidized gate oxide layer and method for making the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11335784B2May 17, 2022

Field plate structure for high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11164970B2Nov 2, 2021

Contact field plate

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US10964810B2Mar 30, 2021

Methodology and structure for field plate design

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10861946B1Dec 8, 2020

Field plate structure for high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9634154B1Apr 25, 2017

Schottky diode having a well with peripherial cathod regions and center andoe region

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12249629B2Mar 11, 2025

Field plate structure for high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990545B2May 21, 2024

Semiconductor device having fully oxidized gate oxide layer and method for making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11271104B2Mar 8, 2022

Composite etch stop layer for contact field plate etching

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10319719B2Jun 11, 2019

Semiconductor device structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12132108B2Oct 29, 2024

Dual gate structures for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11894459B2Feb 6, 2024

Dual gate structures for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12520521B2Jan 6, 2026

Method of forming high voltage transistor and structure resulting therefrom

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60

WANG PEI LUN

5 patents

Wang pei-lun

1 patent