P

Inventor

AHN JEONG HOON

KR42 patents
⚠️ This page may combine multiple inventors who share the name “AHN JEONG HOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

38 patents
US6953745B2Oct 11, 2005

Void-free metal interconnection structure and method of forming the same

SAMSUNG ELECTRONICS CO LTD17 citations84
US11043456B2Jun 22, 2021

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD8 citations82
US7154162B2Dec 26, 2006

Integrated circuit capacitor structure

SAMSUNG ELECTRONICS CO LTD16 citations79
US11538747B2Dec 27, 2022

Interposer structure, semiconductor package comprising the same, and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US10892318B2Jan 12, 2021

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US11133266B2Sep 28, 2021

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US10867908B2Dec 15, 2020

Semiconductor device having buffer structure surrounding through via

SAMSUNG ELECTRONICS CO LTD3 citations72
US11114524B2Sep 7, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations71
US9831139B2Nov 28, 2017

Test structure and method of manufacturing structure including the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US10396030B2Aug 27, 2019

Semiconductor device, layout design method for the same and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations69
US8013455B2Sep 6, 2011

Semiconductor device having pads

SAMSUNG ELECTRONICS CO LTD4 citations63
US12328882B2Jun 10, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12279408B2Apr 15, 2025

Semiconductor device and stack of semiconductor chips

SAMSUNG ELECTRONICS CO LTD0 citations62
US12199016B2Jan 14, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11961882B2Apr 16, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11876038B2Jan 16, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11871553B2Jan 9, 2024

Semiconductor device and stack of semiconductor chips

SAMSUNG ELECTRONICS CO LTD0 citations62
US11728311B2Aug 15, 2023

Semiconductor devices including interposer substrates further including capacitors

SAMSUNG ELECTRONICS CO LTD1 citations62
US7560332B2Jul 14, 2009

Integrated circuit capacitor structure

SAMSUNG ELECTRONICS CO LTD4 citations62
US7351653B2Apr 1, 2008

Method for damascene process

SAMSUNG ELECTRONICS CO LTD2 citations62
US11791267B2Oct 17, 2023

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations61
US11469174B2Oct 11, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations59
US11257754B2Feb 22, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations59
US12142587B2Nov 12, 2024

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations58
US11804459B2Oct 31, 2023

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations58
US11437374B2Sep 6, 2022

Semiconductor device and stacked semiconductor chips including through contacts

SAMSUNG ELECTRONICS CO LTD0 citations57
US7358155B2Apr 15, 2008

Scribe-line structures and methods of forming the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7229875B2Jun 12, 2007

Integrated circuit capacitor structure

SAMSUNG ELECTRONICS CO LTD1 citations52
US12014935B2Jun 18, 2024

Interposer and method of manufacturing the interposer

SAMSUNG ELECTRONICS CO LTD0 citations51
US11798883B2Oct 24, 2023

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US7417302B2Aug 26, 2008

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations51
US12354980B2Jul 8, 2025

Semiconductor package

SAMSUNG ELECTRONICS CO LTD0 citations49
US12300649B2May 13, 2025

Semiconductor package

SAMSUNG ELECTRONICS CO LTD0 citations49
US12598978B2Apr 7, 2026

Semiconductor device having a source/drain contact connected to a back-side power rail by a landing pad and a through electrode

SAMSUNG ELECTRONICS CO LTD0 citations47
US12599040B2Apr 7, 2026

Three-dimensional integrated circuit structure and a method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations44
US10062640B2Aug 28, 2018

Semiconductor devices including sealing regions and decoupling capacitor regions

SAMSUNG ELECTRONICS CO LTD0 citations40
US10424513B2Sep 24, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations39
US9716043B2Jul 25, 2017

Wiring structure and method of forming the same, and semiconductor device including the wiring structure

SAMSUNG ELECTRONICS CO LTD0 citations37

KIM JUN JUNG

1 patent

AHN JEONG HOON

1 patent

AHN JEONG-HOON

1 patent

AHN HAN SIK

1 patent