Inventor
ZHAO XIANGNAN
CN33 patents
Patents
33 patentsUS10991438B1Apr 27, 2021
Method and memory used for reducing program disturbance by adjusting voltage of dummy word line
YANGTZE MEMORY TECH CO LTD7 citations82
US11901023B2Feb 13, 2024
Architecture and method for NAND memory operation
YANGTZE MEMORY TECH CO LTD1 citations73
US10943665B1Mar 9, 2021
Method of programming and verifying memory device and related memory device
YANGTZE MEMORY TECH CO LTD2 citations73
US11710529B2Jul 25, 2023
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD2 citations72
US10957409B1Mar 23, 2021
Method of performing programming operation and related memory device
YANGTZE MEMORY TECH CO LTD3 citations71
US12555642B2Feb 17, 2026
Architecture and method for NAND memory operation
YANGTZE MEMORY TECH CO LTD0 citations62
US12451188B2Oct 21, 2025
Memory programming method, memory device, and memory system
YANGTZE MEMORY TECH CO LTD0 citations62
US12437813B2Oct 7, 2025
Method of reducing program operation time in 3D NAND memory systems
YANGTZE MEMORY TECH CO LTD0 citations62
US12437816B2Oct 7, 2025
Memory, a memory system, and a method for operating memory
YANGTZE MEMORY TECH CO LTD0 citations62
US12237025B2Feb 25, 2025
Memory device, memory system, and program operation method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12176043B2Dec 24, 2024
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD0 citations62
US12093535B2Sep 17, 2024
Memory device, memory system, and program operation method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11875862B2Jan 16, 2024
Memory including a plurality of portions and used for reducing program disturbance and program method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11721403B2Aug 8, 2023
Method of programming and verifying memory device and related memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11594288B2Feb 28, 2023
Memory including a plurality of portions and used for reducing program disturbance and program method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11568941B2Jan 31, 2023
Memory including a plurality of portions and used for reducing program disturbance and program method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11468957B2Oct 11, 2022
Architecture and method for NAND memory operation
YANGTZE MEMORY TECH CO LTD0 citations62
US11423995B2Aug 23, 2022
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD0 citations62
US11195590B2Dec 7, 2021
Memory including a plurality of portions and used for reducing program disturbance and program method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12548625B2Feb 10, 2026
Memory device to program multiple bit lines using a single word line programming pulse
YANGTZE MEMORY TECH CO LTD0 citations61
US12499949B2Dec 16, 2025
Memory devices and operating methods thereof, memory systems
YANGTZE MEMORY TECH CO LTD0 citations61
US12211555B2Jan 28, 2025
Memory device, memory system, and program method thereof
YANGTZE MEMORY TECH CO LTD0 citations61
US11848058B2Dec 19, 2023
Method and memory used for reducing program disturbance by adjusting voltage of dummy word line
YANGTZE MEMORY TECH CO LTD0 citations61
US11626170B2Apr 11, 2023
Method and memory used for reducing program disturbance by adjusting voltage of dummy word line
YANGTZE MEMORY TECH CO LTD0 citations61
US11398284B2Jul 26, 2022
Method of performing programming operation and related memory device
YANGTZE MEMORY TECH CO LTD0 citations61
US12537067B2Jan 27, 2026
Method of operating memory, memory, and memory system
YANGTZE MEMORY TECH CO LTD0 citations59
US12230342B2Feb 18, 2025
Memory device, memory system, and read operation method thereof
YANGTZE MEMORY TECH CO LTD0 citations52
US12561061B2Feb 24, 2026
Three-dimensional NAND memory device and system and method for performing read operations thereof
YANGTZE MEMORY TECH CO LTD0 citations51
US11670373B2Jun 6, 2023
Three-dimensional memory device programming with reduced threshold voltage shift
YANGTZE MEMORY TECH CO LTD0 citations51
US12165716B2Dec 10, 2024
Method of performing programming operation and related memory device
YANGTZE MEMORY TECH CO LTD0 citations50
US12216907B2Feb 4, 2025
Method of improving programming operations in 3D NAND systems
YANGTZE MEMORY TECH CO LTD0 citations49
US11864379B2Jan 2, 2024
Three-dimensional memory and control method thereof
YANGTZE MEMORY TECH CO LTD0 citations49
US12170114B2Dec 17, 2024
Three-dimensional memory device and method for reading the same
YANGTZE MEMORY TECH CO LTD0 citations48