Inventor

OHTA HIROAKI

JP41 patents

⚠️ This page may combine multiple inventors who share the name “OHTA HIROAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OHTA HIROAKI

ROHM CO LTD

Light-emitting device

Semiconductor device employing group III-V nitride semiconductors and method for manufacturing the same

MIS field effect transistor and method for manufacturing the same

Nitride semiconductor device

Semiconductor laser diode

Semiconductor device

Semiconductor laser and method for manufacturing semiconductor laser

Method for forming a nitride semiconductor laminated structure and method for manufacturing a nitride semiconductor element

BLUE LASER FUSION INC

High intensity pulse laser generation system and method

Synchronized light source for laser fusion system and method for energy generation

Fuel pellet configured with internal reflection for an inertial fusion reaction

Airplane configured with a high intensity pulse laser generation system and method

Airplane configured with a high intensity pulse laser generation system and method

High intensity pulse laser generation system and method

Single laser synchronized light source for fusion system and method for energy generation

HONDA MOTOR CO LTD

Fuel cell

Fuel cell stack

Fuel cell stack

Fuel cell stack

Fuel cell stack

SUMITOMO ELECTRIC INDUSTRIES

Method and furnace for drawing optical fibers

Optical fiber drawing furnace with a zig zag heating element

Optical fiber preform manufacturing apparatus which measures a vertical load with three cells

OHTA HIROAKI

Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations

Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface

III-V nitride-based thermoelectric device

UNIV CALIFORNIA

Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction

Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations

Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction

HITACHI LTD

Optical device using a resilient member

Magnetic disk unit with an impact force applying mechanism

NUVOTON TECHNOLOGY CORP JAPAN

Chip singulation method

Chip singulation method

KONISHIROKU PHOTO IND

Method of producing thin-walled endless belt

LIN YOU-DA

Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes

OKAMOTO KUNIYOSHI

Semiconductor light-emitting element and method for fabrication the same

TOYOTA MOTOR CO LTD

Cooling structure

HSU PO SHAN

Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction

NOSE TAKASHI

Power window switch

MOHRI MASAHIRO

Method of starting operation of solid polymer electrolyte fuel cell

TANAKA TAKETOSHI

Laser light emitting device