Inventor
HWANG BYUNG JUN
KR18 patents
⚠️ This page may combine multiple inventors who share the name “HWANG BYUNG JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
11 patentsUS7885114B2Feb 8, 2011
NAND flash memory devices having wiring with integrally-formed contact pads and dummy lines and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD28 citations95
US7479673B2Jan 20, 2009
Semiconductor integrated circuits with stacked node contact structures
SAMSUNG ELECTRONICS CO LTD30 citations92
US7521715B2Apr 21, 2009
Node contact structures in semiconductor devices
SAMSUNG ELECTRONICS CO LTD19 citations84
US6610565B2Aug 26, 2003
Method of forming a CMOS type semiconductor device
SAMSUNG ELECTRONICS CO LTD16 citations84
US7723775B2May 25, 2010
NAND flash memory device having a contact for controlling a well potential
SAMSUNG ELECTRONICS CO LTD8 citations83
US6818489B2Nov 16, 2004
Semiconductor device having LDD-type source/drain regions and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD10 citations74
US7247528B2Jul 24, 2007
Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques
SAMSUNG ELECTRONICS CO LTD4 citations63
US8902660B2Dec 2, 2014
Semiconductor devices having wiring with contact pads and dummy lines
SAMSUNG ELECTRONICS CO LTD1 citations62
US7312110B2Dec 25, 2007
Methods of fabricating semiconductor devices having thin film transistors
SAMSUNG ELECTRONICS CO LTD6 citations62
US6815275B2Nov 9, 2004
Methods for fabricating metal silicide structures using an etch stopping capping layer
SAMSUNG ELECTRONICS CO LTD3 citations56
US7388264B2Jun 17, 2008
Semiconductor device having LDD-type source/drain regions and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD1 citations52
PARK JANG-HO
4 patentsUS8673782B2Mar 18, 2014
Methods of manufacturing NAND flash memory devices
PARK JANG-HO5 citations82
US8339859B2Dec 25, 2012
Nonvolatile memory devices that utilize dummy word line segments to inhibit dishing during fabrication
PARK JANG-HO5 citations72
US8213231B2Jul 3, 2012
NAND flash memory devices having wiring with integrally-formed contact pads and dummy lines and methods of manufacturing the same
PARK JANG-HO5 citations72
US8901746B2Dec 2, 2014
Methods of manufacturing NAND flash memory devices
PARK JANG-HO3 citations61