Inventor

LIN HSIANG-WEI

TW31 patents

⚠️ This page may combine multiple inventors who share the name “LIN HSIANG-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN HSIANG-WEI

TAIWAN SEMICONDUCTOR MFG CO LTD

Multi-barrier deposition for air gap formation

Semiconductor device and manufacturing method thereof

Low-k feature formation processes and structures formed thereby

Multi-barrier deposition for air gap formation

Interconnection structure having air gap

Multi-barrier deposition for air gap formation

Semiconductor structure and method making the same

Multi-barrier deposition for air gap formation

CVD apparatus with gas delivery ring

Directing plasma distribution in plasma-enhanced chemical vapor deposition

Semiconductor structure and method of making the same

Structure for interconnection

Semiconductor structure and method making the same

Method for forming semiconductor structure

Low-K feature formation processes and structures formed thereby

Low-k feature formation processes and structures formed thereby

Low-K feature formation processes and structures formed thereby

Low-k feature formation processes and structures formed thereby

Interconnect with redeposited metal capping and method forming same

Semiconductor structure and method for forming the same

Conductive features with air spacer and method of forming same

FinFET device and method of manufacture

FinFET device and method of manufacture

Semiconductor structure and method of making the same

Semiconductor structure and method making the same

Semiconductor device structure with a low-k spacer layer and method for manufacturing the same

Method for forming semiconductor structure

Method and structure for interconnection

Semiconductor arrangement and method of making the same

TAIWAN SEMICONDUCTOR MFG

Semiconductor arrangement comprising metal cap and dielectric layer defining air gap

Damascene gap structure