P

Inventor

YIN LI-WEI

TW16 patents
⚠️ This page may combine multiple inventors who share the name “YIN LI-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

15 patents
US10325912B2Jun 18, 2019

Semiconductor structure cutting process and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD19 citations94
US11502076B2Nov 15, 2022

Semiconductor structure cutting process and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations85
US11114549B2Sep 7, 2021

Semiconductor structure cutting process and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations85
US12237416B2Feb 25, 2025

Cut-fin isolation regions and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations74
US10872897B2Dec 22, 2020

Cutting metal gates in fin field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10424588B2Sep 24, 2019

Cutting metal gates in fin field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11069579B2Jul 20, 2021

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12538561B2Jan 27, 2026

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12132050B2Oct 29, 2024

Semiconductor structure cutting process and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11894370B2Feb 6, 2024

Semiconductor structure cutting process and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11823958B2Nov 21, 2023

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11171236B2Nov 9, 2021

Cut-fin isolation regions and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12490487B2Dec 2, 2025

Tunable structure profile

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10658372B2May 19, 2020

Cutting metal gates in fin field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12532499B2Jan 20, 2026

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50

DO NOT USE—TAIWAN SEMICONDUCTOR MFG CO LTD

1 patent