Inventor
NARAZAKI ATSUSHI
JP33 patents
⚠️ This page may combine multiple inventors who share the name “NARAZAKI ATSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
18 patentsUS6927455B2Aug 9, 2005
Power semiconductor device having semiconductor-layer-forming position controlled by ion implantation without using photoresist pattern, and method of manufacturing such power semiconductor device
MITSUBISHI ELECTRIC CORP31 citations92
US7045831B2May 16, 2006
Semiconductor device
MITSUBISHI ELECTRIC CORP15 citations84
US6285058B1Sep 4, 2001
Insulated gate semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP20 citations81
US6495863B2Dec 17, 2002
Semiconductor device having diode for input protection circuit of MOS structure device
MITSUBISHI ELECTRIC CORP7 citations73
US5545573AAug 13, 1996
Method of fabricating insulated gate semiconductor device
MITSUBISHI ELECTRIC CORP18 citations73
US10192977B2Jan 29, 2019
Power semiconductor device
MITSUBISHI ELECTRIC CORP3 citations72
US9799648B2Oct 24, 2017
Semiconductor device
MITSUBISHI ELECTRIC CORP4 citations72
US10243067B2Mar 26, 2019
Semiconductor device and method for manufacturing the same
MITSUBISHI ELECTRIC CORP2 citations71
US6642600B2Nov 4, 2003
Insulated gate semiconductor device having first trench and second trench connected to the same
MITSUBISHI ELECTRIC CORP12 citations68
US9219113B2Dec 22, 2015
Semiconductor device having breakdown voltage enhancement structure
MITSUBISHI ELECTRIC CORP3 citations63
US10892352B2Jan 12, 2021
Power semiconductor device
MITSUBISHI ELECTRIC CORP0 citations62
US9105486B2Aug 11, 2015
Semiconductor device
MITSUBISHI ELECTRIC CORP2 citations62
US7319264B2Jan 15, 2008
Semiconductor device
MITSUBISHI ELECTRIC CORP3 citations62
US10176994B2Jan 8, 2019
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP1 citations61
US12021118B2Jun 25, 2024
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations48
US7741655B2Jun 22, 2010
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations42
US10431658B2Oct 1, 2019
Silicon carbide semiconductor device, manufacturing method therefor and power conversion apparatus
MITSUBISHI ELECTRIC CORP0 citations41
US10797169B2Oct 6, 2020
Silicon carbide semiconductor device and power conversion apparatus
MITSUBISHI ELECTRIC CORP0 citations39
NARAZAKI ATSUSHI
8 patentsUS8552468B2Oct 8, 2013
Power semiconductor device
NARAZAKI ATSUSHI6 citations72
US8124533B2Feb 28, 2012
Method of manufacturing power semiconductor device
NARAZAKI ATSUSHI5 citations61
US8884383B2Nov 11, 2014
Semiconductor device and method of testing the same
NARAZAKI ATSUSHI0 citations51
US8178365B2May 15, 2012
Method of manufacturing semiconductor device
NARAZAKI ATSUSHI1 citations49
US8530966B2Sep 10, 2013
Semiconductor device
NARAZAKI ATSUSHI1 citations43
US8618604B2Dec 31, 2013
Semiconductor device and method of manufacturing the same
NARAZAKI ATSUSHI0 citations40
US8593167B2Nov 26, 2013
Semiconductor device test method and apparatus, and semiconductor device
NARAZAKI ATSUSHI0 citations40
US8519733B2Aug 27, 2013
Method of measuring characteristics of a semiconductor element and method of manufacturing a semiconductor device
NARAZAKI ATSUSHI0 citations40