Inventor
BERTOTTI FRANCO
IT21 patents
⚠️ This page may combine multiple inventors who share the name “BERTOTTI FRANCO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SGS MICROELETTRONICA SPA
10 patentsUS4887142ADec 12, 1989
Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication
SGS MICROELETTRONICA SPA118 citations96
US4890149ADec 26, 1989
Integrated device for shielding charge injection into the substrate, in particular in driving circuits for inductive and capacitive loads
SGS MICROELETTRONICA SPA20 citations81
US4829344AMay 9, 1989
Electronic semiconductor device for protecting integrated circuits against electrostatic discharges
SGS MICROELETTRONICA SPA15 citations74
US4740821AApr 26, 1988
NPN equivalent structure with breakdown voltage greater than the intrinsic breakdown voltage of NPN transistors
SGS MICROELETTRONICA SPA8 citations74
US4739378AApr 19, 1988
Protection of integrated circuits from electric discharge
SGS MICROELETTRONICA SPA19 citations74
US4672235AJun 9, 1987
Bipolar power transistor
SGS MICROELETTRONICA SPA7 citations74
US4725810AFeb 16, 1988
Method of making an implanted resistor, and resistor obtained thereby
SGS MICROELETTRONICA SPA9 citations73
US4682197AJul 21, 1987
Power transistor with spaced subtransistors having individual collectors
SGS MICROELETTRONICA SPA13 citations73
US4641171AFeb 3, 1987
Monolithically integrated semiconductor power device
SGS MICROELETTRONICA SPA9 citations72
US4663647AMay 5, 1987
Buried-resistance semiconductor device and fabrication process
SGS MICROELETTRONICA SPA3 citations62
SGS THOMSON MICROELECTRONICS
5 patentsUS5021860AJun 4, 1991
Integrated device for shielding the injection of charges into the substrate
SGS THOMSON MICROELECTRONICS41 citations91
US5185649AFeb 9, 1993
Circuital arrangement for preventing latchup in transistors with insulated collectors
SGS THOMSON MICROELECTRONICS11 citations74
US4887141ADec 12, 1989
Saturation limiting system for a vertical, isolated collector PNP transistor and monolithically integrated structure thereof
SGS THOMSON MICROELECTRONICS8 citations72
USRE35486EApr 1, 1997
Circuital arrangement for preventing latchup in transistors with insulated collectors
SGS THOMSON MICROELECTRONICS4 citations63
US4910159AMar 20, 1990
Method for incrementally increasing the collector area of a lateral PNP transistor during electrical testing of an integrated device on wafer
SGS THOMSON MICROELECTRONICS2 citations61
ATES COMPONENTI ELETTRON
5 patentsUS4631561ADec 23, 1986
Semiconductor overvoltage suppressor with accurately determined striking potential
ATES COMPONENTI ELETTRON15 citations73
US4266233AMay 5, 1981
I-C Wafer incorporating junction-type field-effect transistor
ATES COMPONENTI ELETTRON16 citations73
US4245209AJan 13, 1981
Voltage divider including a tapped resistor diffused in semiconductor substrate
ATES COMPONENTI ELETTRON9 citations63
US4614962ASep 30, 1986
Controlled electronic switching device for the suppression of transients
ATES COMPONENTI ELETTRON6 citations58
US4319262AMar 9, 1982
Integrated-circuit structure including lateral PNP transistor with polysilicon layer bridging gap in collector field relief electrode
ATES COMPONENTI ELETTRON6 citations56