Inventor
AHLGREN DAVID C
US15 patents
Patents
15 patentsUS5766971AJun 16, 1998
Oxide strip that improves planarity
IBM67 citations96
US6492238B1Dec 10, 2002
Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit
IBM45 citations95
US6979884B2Dec 27, 2005
Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border
IBM27 citations92
US6858532B2Feb 22, 2005
Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
IBM44 citations92
US6780695B1Aug 24, 2004
BiCMOS integration scheme with raised extrinsic base
IBM24 citations92
US4667395AMay 26, 1987
Method for passivating an undercut in semiconductor device preparation
IBM31 citations92
US7217988B2May 15, 2007
Bipolar transistor with isolation and direct contacts
IBM10 citations84
US6667521B2Dec 23, 2003
Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit
IBM15 citations83
US7129129B2Oct 31, 2006
Vertical device with optimal trench shape
IBM9 citations74
US5266505ANov 30, 1993
Image reversal process for self-aligned implants in planar epitaxial-base bipolar transistors
IBM15 citations70
US7466010B2Dec 16, 2008
Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border
IBM4 citations63
US7611953B2Nov 3, 2009
Bipolar transistor with isolation and direct contacts
IBM5 citations62
US4701998AOct 27, 1987
Method for fabricating a bipolar transistor
IBM5 citations61
US7585740B2Sep 8, 2009
Fully silicided extrinsic base transistor
IBM0 citations52
US6881259B1Apr 19, 2005
In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films
IBM1 citations52