Inventor
BUI NGUYEN DUC
US14 patents
⚠️ This page may combine multiple inventors who share the name “BUI NGUYEN DUC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
10 patentsUS6163049ADec 19, 2000
Method of forming a composite interpoly gate dielectric
ADVANCED MICRO DEVICES INC121 citations98
US5712510AJan 27, 1998
Reduced electromigration interconnection line
ADVANCED MICRO DEVICES INC78 citations96
US5726458AMar 10, 1998
Hot carrier injection test structure and technique for statistical evaluation
ADVANCED MICRO DEVICES INC18 citations92
US5689139ANov 18, 1997
Enhanced electromigration lifetime of metal interconnection lines
ADVANCED MICRO DEVICES INC48 citations92
US5650651AJul 22, 1997
Plasma damage reduction device for sub-half micron technology
ADVANCED MICRO DEVICES INC32 citations92
US5786705AJul 28, 1998
Method for evaluating the effect of a barrier layer on electromigration for plug and non-plug interconnect systems
ADVANCED MICRO DEVICES INC18 citations90
US6329831B1Dec 11, 2001
Method and apparatus for reliability testing of integrated circuit structures and devices
ADVANCED MICRO DEVICES INC42 citations87
US6413820B2Jul 2, 2002
Method of forming a composite interpoly gate dielectric
ADVANCED MICRO DEVICES INC12 citations73
US6063662AMay 16, 2000
Methods for forming a control gate apparatus in non-volatile memory semiconductor devices
ADVANCED MICRO DEVICES INC8 citations73
US5808361ASep 15, 1998
Intergrated circuit interconnect via structure having low resistance
ADVANCED MICRO DEVICES INC8 citations73
LATTICE SEMICONDUCTOR CORP
4 patentsUS6700154B1Mar 2, 2004
EEPROM cell with trench coupling capacitor
LATTICE SEMICONDUCTOR CORP24 citations86
US11295825B2Apr 5, 2022
Multi-time programmable non-volatile memory cell
LATTICE SEMICONDUCTOR CORP2 citations70
US10217521B2Feb 26, 2019
Multi-time programmable non-volatile memory cell
LATTICE SEMICONDUCTOR CORP4 citations70
US6703305B1Mar 9, 2004
Semiconductor device having metallized interconnect structure and method of fabrication
LATTICE SEMICONDUCTOR CORP0 citations50