Inventor
CHAPEK DAVID L
US21 patents
⚠️ This page may combine multiple inventors who share the name “CHAPEK DAVID L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
17 patentsUS6747249B2Jun 8, 2004
System for performing thermal reflow operations under high gravity conditions
MICRON TECHNOLOGY INC16 citations92
US6323101B1Nov 27, 2001
Semiconductor processing methods, methods of forming silicon dioxide methods of forming trench isolation regions, and methods of forming interlevel dielectric layers
MICRON TECHNOLOGY INC19 citations92
US6214697B1Apr 10, 2001
Trench isolation for semiconductor devices
MICRON TECHNOLOGY INC24 citations92
US6051480AApr 18, 2000
Trench isolation for semiconductor devices
MICRON TECHNOLOGY INC20 citations92
US6165853ADec 26, 2000
Trench isolation method
MICRON TECHNOLOGY INC17 citations84
US6288367B1Sep 11, 2001
Method and apparatus for performing thermal reflow operations under high gravity conditions
MICRON TECHNOLOGY INC11 citations82
US6573478B2Jun 3, 2003
Systems for performing thermal reflow operations under high gravity conditions
MICRON TECHNOLOGY INC6 citations74
US6271152B1Aug 7, 2001
Method for forming oxide using high pressure
MICRON TECHNOLOGY INC6 citations74
US6096998AAug 1, 2000
Method and apparatus for performing thermal reflow operations under high gravity conditions
MICRON TECHNOLOGY INC6 citations74
US6066576AMay 23, 2000
Method for forming oxide using high pressure
MICRON TECHNOLOGY INC13 citations74
US5846888ADec 8, 1998
Method for in-situ incorporation of desirable impurities into high pressure oxides
MICRON TECHNOLOGY INC10 citations74
US6143631ANov 7, 2000
Method for controlling the morphology of deposited silicon on a silicon dioxide substrate and semiconductor devices incorporating such deposited silicon
MICRON TECHNOLOGY INC11 citations73
US6414275B2Jul 2, 2002
Method and apparatus for performing thermal reflow operations under high gravity conditions
MICRON TECHNOLOGY INC2 citations63
US6174761B1Jan 16, 2001
Method and apparatus for performing thermal reflow operations under high gravity conditions
MICRON TECHNOLOGY INC2 citations63
US7235856B1Jun 26, 2007
Trench isolation for semiconductor devices
MICRON TECHNOLOGY INC1 citations52
US6891245B2May 10, 2005
Integrated circuit formed by removing undesirable second oxide while minimally affecting a desirable first oxide
MICRON TECHNOLOGY INC0 citations52
US6096660AAug 1, 2000
Method for removing undesirable second oxide while minimally affecting a desirable first oxide
MICRON TECHNOLOGY INC1 citations52