Inventor
FUJIWARA SHUJI
JP26 patents
⚠️ This page may combine multiple inventors who share the name “FUJIWARA SHUJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
9 patentsUS5959326ASep 28, 1999
Capacitor incorporated in semiconductor device having a lower electrode composed of multi-layers or of graded impurity concentration
NEC CORP88 citations96
US6103568AAug 15, 2000
Manufacturing method of cylindrical stacked electrode
NEC CORP24 citations92
US5938857AAug 17, 1999
Method for rinsing and drying a substrate
NEC CORP31 citations92
US5858834AJan 12, 1999
Method for forming cylindrical capacitor lower plate in semiconductor device
NEC CORP21 citations92
US6300186B1Oct 9, 2001
Method of measuring semiconductor device
NEC CORP7 citations74
US6218230B1Apr 17, 2001
Method for producing capacitor having hemispherical grain
NEC CORP12 citations74
US6146966ANov 14, 2000
Process for forming a capacitor incorporated in a semiconductor device
NEC CORP12 citations74
US5952721ASep 14, 1999
Semiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layer
NEC CORP2 citations62
US6143619ANov 7, 2000
Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus
NEC CORP6 citations57
SANYO ELECTRIC CO
6 patentsUS5356870AOct 18, 1994
Method for processing superconducting thin films
SANYO ELECTRIC CO12 citations72
US5880069AMar 9, 1999
Process of making high Tc Josephson junction device
SANYO ELECTRIC CO15 citations71
US5227364AJul 13, 1993
Method of forming patterned oxide superconducting films and Josephson junction devices by using an aqueous alkaline solution
SANYO ELECTRIC CO8 citations71
US5873985AFeb 23, 1999
Process of making squid device having tilt-boundary junction
SANYO ELECTRIC CO4 citations60
US7459766B2Dec 2, 2008
Semiconductor bipolar transistor
SANYO ELECTRIC CO1 citations52
US7564075B2Jul 21, 2009
Semiconductor device
SANYO ELECTRIC CO0 citations41