Inventor
CHO HYE-JIN
KR24 patents
⚠️ This page may combine multiple inventors who share the name “CHO HYE-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS7332386B2Feb 19, 2008
Methods of fabricating fin field transistors
SAMSUNG ELECTRONICS CO LTD56 citations98
US7265418B2Sep 4, 2007
Semiconductor devices having field effect transistors
SAMSUNG ELECTRONICS CO LTD70 citations98
US7285466B2Oct 23, 2007
Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels
SAMSUNG ELECTRONICS CO LTD28 citations92
US7122431B2Oct 17, 2006
Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions
SAMSUNG ELECTRONICS CO LTD20 citations92
US7915138B2Mar 29, 2011
Methods of manufacturing non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US7804137B2Sep 28, 2010
Field effect transistor (FET) devices and methods of manufacturing FET devices
SAMSUNG ELECTRONICS CO LTD12 citations84
US7473963B2Jan 6, 2009
Metal oxide semiconductor (MOS) transistors having three dimensional channels
SAMSUNG ELECTRONICS CO LTD8 citations84
US7329581B2Feb 12, 2008
Field effect transistor (FET) devices and methods of manufacturing FET devices
SAMSUNG ELECTRONICS CO LTD12 citations84
US7227220B2Jun 5, 2007
Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines
SAMSUNG ELECTRONICS CO LTD11 citations84
US7129541B2Oct 31, 2006
Field effect transistors including vertically oriented gate electrodes extending inside vertically protruding portions of a substrate
SAMSUNG ELECTRONICS CO LTD13 citations84
US7602010B2Oct 13, 2009
Multi-bit multi-level non-volatile memory device and methods of operating and fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7939408B2May 10, 2011
Non-volatile memory device for 2-bit operation and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7897463B2Mar 1, 2011
Methods of fabricating vertical twin-channel transistors
SAMSUNG ELECTRONICS CO LTD6 citations63
US7875921B2Jan 25, 2011
Non-volatile memory device for 2-bit operation and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7768070B2Aug 3, 2010
Semiconductor devices having field effect transistors
SAMSUNG ELECTRONICS CO LTD5 citations63
US7675105B2Mar 9, 2010
Non-volatile memory device for 2-bit operation and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7541645B2Jun 2, 2009
Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions
SAMSUNG ELECTRONICS CO LTD4 citations63
US8030698B2Oct 4, 2011
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7955884B2Jun 7, 2011
Semiconductor packages
SAMSUNG ELECTRONICS CO LTD1 citations52
SAMSUNG ELECTRO MECH
4 patentsUS7655161B2Feb 2, 2010
Conductive ink composition for inkjet printing
SAMSUNG ELECTRO MECH13 citations83
US7591872B1Sep 22, 2009
Method for producing silver nanoparticles and conductive ink
SAMSUNG ELECTRO MECH13 citations83
US7713862B2May 11, 2010
Printed wiring board and method for manufacturing the same
SAMSUNG ELECTRO MECH8 citations81
US7968449B2Jun 28, 2011
Method for manufacturing printed wiring board
SAMSUNG ELECTRO MECH1 citations49