Inventor

AOIKE TATSUYUKI

JP42 patents

Patents

42 patents

US5527396AJun 18, 1996

Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film

CANON KK37 citations93

US5007971AApr 16, 1991

Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film

CANON KK40 citations93

US5006180AApr 9, 1991

Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film

CANON KK35 citations93

US5002618AMar 26, 1991

Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film

CANON KK31 citations93

US5002617AMar 26, 1991

Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film

CANON KK24 citations93

US6250251B1Jun 26, 2001

Vacuum processing apparatus and vacuum processing method

CANON KK49 citations92

US5429685AJul 4, 1995

Photoelectric conversion element and power generation system using the same

CANON KK34 citations92

US5371380ADec 6, 1994

Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less

CANON KK23 citations92

US5284525AFeb 8, 1994

Solar cell

CANON KK21 citations92

US5281541AJan 25, 1994

Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method

CANON KK23 citations92

US5418680AMay 23, 1995

Apparatus for repairing an electrically short-circuited semiconductor device

CANON KK16 citations82

US4981766AJan 1, 1991

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon material

CANON KK19 citations82

US4954397ASep 4, 1990

Light receiving member having a divided-functionally structured light receiving layer having CGL and CTL for use in electrophotography

CANON KK21 citations81

US6670089B2Dec 30, 2003

Electrophotographic image forming method and apparatus

CANON KK7 citations74

US6300225B1Oct 9, 2001

Plasma processing method

CANON KK11 citations74

US6165274ADec 26, 2000

Plasma processing apparatus and method

CANON KK15 citations74

US5961726AOct 5, 1999

Deposited film forming apparatus and electrode for use in it

CANON KK9 citations74

US5741615AApr 21, 1998

Light receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and Mg

CANON KK14 citations74

US5604133AFeb 18, 1997

Method of making photovoltaic device

CANON KK15 citations74

US5573601ANov 12, 1996

Pin amorphous silicon photovoltaic element with counter-doped intermediate layer

CANON KK17 citations74

US5563075AOct 8, 1996

Forming a non-monocrystalline silicone semiconductor having pin junction including laminated intrinsic layers

CANON KK15 citations74

US5563425AOct 8, 1996

Photoelectrical conversion device and generating system using the same

CANON KK12 citations74

US5510631AApr 23, 1996

Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same

CANON KK10 citations74

US5362684ANov 8, 1994

Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same

CANON KK13 citations74

US5358811AOct 25, 1994

Electrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micron

CANON KK17 citations74

US5338370AAug 16, 1994

Photovoltaic device

CANON KK12 citations74

US5087542AFeb 11, 1992

Electrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are used

CANON KK13 citations74

US4886723ADec 12, 1989

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

CANON KK7 citations74

US4845001AJul 4, 1989

Light receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitride

CANON KK10 citations74

US4795691AJan 3, 1989

Layered amorphous silicon photoconductor with surface layer having specific refractive index properties

CANON KK19 citations74

US6443191B1Sep 3, 2002

Vacuum processing methods

CANON KK9 citations73

US6649020B1Nov 18, 2003

Plasma processing apparatus

CANON KK3 citations63

US5236798AAug 17, 1993

Electrophotographic light receiving member having a photoconductive layer formed of non-single crystal silicon material and a surface layer containing polysilane compound

CANON KK5 citations63

US4906543AMar 6, 1990

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

CANON KK3 citations63

US4906542AMar 6, 1990

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

CANON KK4 citations63

US4882251ANov 21, 1989

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

CANON KK5 citations63

US7550180B2Jun 23, 2009

Plasma treatment method

CANON KK0 citations52

US6761128B2Jul 13, 2004

Plasma treatment apparatus

CANON KK0 citations52

US6486045B2Nov 26, 2002

Apparatus and method for forming deposited film

CANON KK1 citations52

AOIKE TATSUYUKI

Patents

Deposited film forming apparatus

Photovoltaic device and a forming method thereof

Photovoltaic device

Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film

Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film

Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film

Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film

Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film

Vacuum processing apparatus and vacuum processing method

Photoelectric conversion element and power generation system using the same

Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less

Solar cell

Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method

Apparatus for repairing an electrically short-circuited semiconductor device

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon material

Light receiving member having a divided-functionally structured light receiving layer having CGL and CTL for use in electrophotography

Electrophotographic image forming method and apparatus

Plasma processing method

Plasma processing apparatus and method

Deposited film forming apparatus and electrode for use in it

Light receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and Mg

Method of making photovoltaic device

Pin amorphous silicon photovoltaic element with counter-doped intermediate layer

Forming a non-monocrystalline silicone semiconductor having pin junction including laminated intrinsic layers

Photoelectrical conversion device and generating system using the same

Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same

Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same

Electrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micron

Photovoltaic device

Electrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are used

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

Light receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitride

Layered amorphous silicon photoconductor with surface layer having specific refractive index properties

Vacuum processing methods

Plasma processing apparatus

Electrophotographic light receiving member having a photoconductive layer formed of non-single crystal silicon material and a surface layer containing polysilane compound

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

Plasma treatment method

Plasma treatment apparatus

Apparatus and method for forming deposited film