Inventor

KARIYA TOSHIMITSU

JP37 patents

Patents

37 patents

US6123824ASep 26, 2000

Process for producing photo-electricity generating device

CANON KK197 citations99

US6140570AOct 31, 2000

Photovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovolatic element

CANON KK112 citations98

US5421909AJun 6, 1995

Photovoltaic conversion device

CANON KK115 citations97

US6344608B2Feb 5, 2002

Photovoltaic element

CANON KK52 citations96

US5714010AFeb 3, 1998

Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same

CANON KK80 citations96

US5599403AFeb 4, 1997

Semiconductor device containing microcrystalline germanium & method for producing the same

CANON KK66 citations96

US5527391AJun 18, 1996

Method and apparatus for continuously forming functional deposited films with a large area by a microwave plasma CVD method

CANON KK72 citations96

US5520740AMay 28, 1996

Process for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the same

CANON KK89 citations96

US5456762AOct 10, 1995

Photoelectric conversion elements

CANON KK65 citations96

US5401330AMar 28, 1995

Photovoltaic element

CANON KK78 citations96

US5114770AMay 19, 1992

Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method

CANON KK61 citations96

US5656098AAug 12, 1997

Method for producing a photovoltaic element with zno layer having increasing fluorine content in layer thickness direction

CANON KK34 citations93

US5849108ADec 15, 1998

Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction

CANON KK24 citations93

US5510151AApr 23, 1996

Continuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating space

CANON KK42 citations93

US5130170AJul 14, 1992

Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation

CANON KK41 citations93

US7189917B2Mar 13, 2007

Stacked photovoltaic device

CANON KK24 citations92

US6472248B2Oct 29, 2002

Microcrystalline series photovoltaic element and process for fabrication of same

CANON KK49 citations92

US5439533AAug 8, 1995

Photovoltaic device, method of producing the same and generating system using the same

CANON KK22 citations92

US5371380ADec 6, 1994

Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less

CANON KK23 citations92

US5284525AFeb 8, 1994

Solar cell

CANON KK21 citations92

US5281541AJan 25, 1994

Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method

CANON KK23 citations92

US5418680AMay 23, 1995

Apparatus for repairing an electrically short-circuited semiconductor device

CANON KK16 citations82

US4981766AJan 1, 1991

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon material

CANON KK19 citations82

US5510631AApr 23, 1996

Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same

CANON KK10 citations74

US5362684ANov 8, 1994

Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same

CANON KK13 citations74

US5358811AOct 25, 1994

Electrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micron

CANON KK17 citations74

US5087542AFeb 11, 1992

Electrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are used

CANON KK13 citations74

US4886723ADec 12, 1989

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

CANON KK7 citations74

US4906543AMar 6, 1990

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

CANON KK3 citations63

US4906542AMar 6, 1990

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

CANON KK4 citations63

US4882251ANov 21, 1989

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

CANON KK5 citations63

KARIYA TOSHIMITSU

Patents

Process for producing photo-electricity generating device

Photovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovolatic element

Photovoltaic conversion device

Photovoltaic element

Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same

Semiconductor device containing microcrystalline germanium &amp; method for producing the same

Method and apparatus for continuously forming functional deposited films with a large area by a microwave plasma CVD method

Process for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the same

Photoelectric conversion elements

Photovoltaic element

Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method

Photovoltaic conversion device and method for producing same

Deposited film forming apparatus

Photovoltaic device and a forming method thereof

Photovoltaic device

Photoconductive thin film, and photovoltaic device making use of the same

Photoelectric conversion element

Method for producing a photovoltaic element with zno layer having increasing fluorine content in layer thickness direction

Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction

Continuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating space

Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation

Stacked photovoltaic device

Microcrystalline series photovoltaic element and process for fabrication of same

Photovoltaic device, method of producing the same and generating system using the same

Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less

Solar cell

Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method

Apparatus for repairing an electrically short-circuited semiconductor device

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon material

Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same

Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same

Electrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micron

Electrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are used

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

Semiconductor device containing microcrystalline germanium & method for producing the same