Inventor
IKARASHI NOBUYUKI
JP14 patents
⚠️ This page may combine multiple inventors who share the name “IKARASHI NOBUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
8 patentsUS7545040B2Jun 9, 2009
Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device
NEC CORP25 citations92
US6459126B1Oct 1, 2002
Semiconductor device including a MIS transistor
NEC CORP33 citations91
US7592674B2Sep 22, 2009
Semiconductor device with silicide-containing gate electrode and method of fabricating the same
NEC CORP14 citations83
US8368175B2Feb 5, 2013
Capacitor, semiconductor device having the same, and method of producing them
NEC CORP8 citations82
US7476916B2Jan 13, 2009
Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film
NEC CORP6 citations62
US7495264B2Feb 24, 2009
Semiconductor device with high dielectric constant insulating film and manufacturing method for the same
NEC CORP0 citations50
US7164169B2Jan 16, 2007
Semiconductor device having high-permittivity insulation film and production method therefor
NEC CORP0 citations50
US7812412B2Oct 12, 2010
Semiconductor device
NEC CORP0 citations48
RENESAS ELECTRONICS CORP
4 patentsUS7968463B2Jun 28, 2011
Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer
RENESAS ELECTRONICS CORP11 citations83
US9263532B2Feb 16, 2016
Semiconductor device, semiconductor substrate, method for manufacturing semiconductor device, and method for manufacturing semiconductor substrate
RENESAS ELECTRONICS CORP0 citations51
US9362110B2Jun 7, 2016
Semiconductor device and method of manufacturing the semiconductor device
RENESAS ELECTRONICS CORP0 citations50
US8872234B2Oct 28, 2014
Semiconductor device and method of manufacturing the semiconductor device
RENESAS ELECTRONICS CORP0 citations50