Inventor
NISHIZAWA JUN-ICHI
JP161 patents
⚠️ This page may combine multiple inventors who share the name “NISHIZAWA JUN-ICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ZAIDAN HOJIN HANDOTAI KENKYU
18 patentsUS5384476AJan 24, 1995
Short channel MOSFET with buried anti-punch through region
ZAIDAN HOJIN HANDOTAI KENKYU139 citations99
US5808328ASep 15, 1998
High-speed and high-density semiconductor memory
ZAIDAN HOJIN HANDOTAI KENKYU71 citations96
US4434433AFeb 28, 1984
Enhancement mode JFET dynamic memory
ZAIDAN HOJIN HANDOTAI KENKYU47 citations96
US4329625AMay 11, 1982
Light-responsive light-emitting diode display
ZAIDAN HOJIN HANDOTAI KENKYU470 citations96
US4416952ANov 22, 1983
Oxynitride film and its manufacturing method
ZAIDAN HOJIN HANDOTAI KENKYU49 citations94
US4404575ASep 13, 1983
Semiconductor device
ZAIDAN HOJIN HANDOTAI KENKYU43 citations93
US4115793ASep 19, 1978
Field effect transistor with reduced series resistance
ZAIDAN HOJIN HANDOTAI KENKYU32 citations93
US4484207ANov 20, 1984
Static induction transistor and semiconductor integrated circuit using hetero-junction
ZAIDAN HOJIN HANDOTAI KENKYU28 citations92
US5021936AJun 4, 1991
PWM power converter using mixed bipolar and static induction transistors
ZAIDAN HOJIN HANDOTAI KENKYU22 citations87
US4952996AAug 28, 1990
Static induction and punching-through photosensitive transistor devices
ZAIDAN HOJIN HANDOTAI KENKYU20 citations82
US4814839AMar 21, 1989
Insulated gate static induction transistor and integrated circuit including same
ZAIDAN HOJIN HANDOTAI KENKYU20 citations82
US4772926ASep 20, 1988
Insulated gate static induction type thyristor
ZAIDAN HOJIN HANDOTAI KENKYU17 citations82
US4482910ANov 13, 1984
Heterojunction emitter transistor with saturation drift velocity gradient in base
ZAIDAN HOJIN HANDOTAI KENKYU20 citations82
US4470059ASep 4, 1984
Gallium arsenide static induction transistor
ZAIDAN HOJIN HANDOTAI KENKYU26 citations82
US4427990AJan 24, 1984
Semiconductor photo-electric converter with insulated gate over p-n charge storage region
ZAIDAN HOJIN HANDOTAI KENKYU24 citations82
US4364072ADec 14, 1982
Static induction type semiconductor device with multiple doped layers for potential modification
ZAIDAN HOJIN HANDOTAI KENKYU27 citations82
US4338618AJul 6, 1982
Composite static induction transistor and integrated circuit utilizing same
ZAIDAN HOJIN HANDOTAI KENKYU22 citations82
US4334235AJun 8, 1982
Insulated gate type semiconductor device
ZAIDAN HOJIN HANDOTAI KENKYU24 citations82
SEMICONDUCTOR RES FOUND
6 patentsUS4540466ASep 10, 1985
Method of fabricating semiconductor device by dry process utilizing photochemical reaction, and apparatus therefor
SEMICONDUCTOR RES FOUND67 citations96
US4454526AJun 12, 1984
Semiconductor image sensor and the method of operating the same
SEMICONDUCTOR RES FOUND46 citations93
US4377817AMar 22, 1983
Semiconductor image sensors
SEMICONDUCTOR RES FOUND50 citations93
US4177321ADec 4, 1979
Single crystal of semiconductive material on crystal of insulating material
SEMICONDUCTOR RES FOUND46 citations93
US4408304AOct 4, 1983
Semiconductor memory
SEMICONDUCTOR RES FOUND36 citations89
US4504865AMar 12, 1985
Image signal readout methd for solid-state image sensor
SEMICONDUCTOR RES FOUND24 citations82
FUJI PHOTO FILM CO LTD
5 patentsUS4471228ASep 11, 1984
Solid-state image sensor with exposure controller
FUJI PHOTO FILM CO LTD293 citations99
US4472638ASep 18, 1984
Two-dimensional solid-state image sensor
FUJI PHOTO FILM CO LTD42 citations93
US4450466AMay 22, 1984
Semiconductor image sensor
FUJI PHOTO FILM CO LTD28 citations93
US4475131AOct 2, 1984
Image storage device
FUJI PHOTO FILM CO LTD31 citations92
US4415937ANov 15, 1983
Solid-state image storage device
FUJI PHOTO FILM CO LTD21 citations82
JAPAN RES DEV CORP
4 patentsUS5296403AMar 22, 1994
Method of manufacturing a static induction field-effect transistor
JAPAN RES DEV CORP118 citations97
US5532511AJul 2, 1996
Semiconductor device comprising a highspeed static induction transistor
JAPAN RES DEV CORP83 citations95
US5338389AAug 16, 1994
Method of epitaxially growing compound crystal and doping method therein
JAPAN RES DEV CORP85 citations95
US5254207AOct 19, 1993
Method of epitaxially growing semiconductor crystal using light as a detector
JAPAN RES DEV CORP81 citations95
NISHIZAWA JUNICHI
4 patentsUS5017991AMay 21, 1991
Light quenchable thyristor device
NISHIZAWA JUNICHI31 citations92
US4819058AApr 4, 1989
Semiconductor device having a pn junction
NISHIZAWA JUNICHI15 citations82
US4623909ANov 18, 1986
Semiconductor photodetector
NISHIZAWA JUNICHI20 citations82
US4465527AAug 14, 1984
Method for producing a group IIB-VIB compound semiconductor crystal
NISHIZAWA JUNICHI20 citations82
OLYMPUS OPTICAL CO
3 patentsUS4891682AJan 2, 1990
Solid state image pick-up device having a number of static induction transistor image sensors
OLYMPUS OPTICAL CO33 citations92
US4531156AJul 23, 1985
Solid state image pickup device
OLYMPUS OPTICAL CO29 citations91
US4589003AMay 13, 1986
Solid state image sensor comprising photoelectric converting film and reading-out transistor
OLYMPUS OPTICAL CO20 citations82
HANDOTAI KENKYU SHINKOKAI
2 patentsSTANLEY ELECTRIC CO LTD
1 patentMITSUBISHI ELECTRIC CORP
1 patentSMALL POWER COMMUNICATION SYST
1 patentBUDDA HAJIA HANDOTAI KENKYU SH
1 patentRESEARCH DEV CORP
1 patentZAIDAN HOJIN HANDOTAI KANKYU S
1 patentJGC CORP
1 patentNIPPON MUSICAL INSTRUMENTS MFG
1 patentShowing the top 50 of 161 patents by PatentIndex Score.