Inventor
Pao Chia-Hao
TW47 patents
Patents
47 patentsUS9620509B1Apr 11, 2017
Static random access memory device with vertical FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD30 citations94
US11996484B2May 28, 2024
Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11393831B2Jul 19, 2022
Optimized static random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11342338B2May 24, 2022
Memory device with improved margin and performance and methods of formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11024370B2Jun 1, 2021
Static random access memory with write assist adjustment
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12294030B2May 6, 2025
Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US11980016B2May 7, 2024
Connection between source/drain and gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11450673B2Sep 20, 2022
Connection between source/drain and gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12563825B2Feb 24, 2026
Integrated circuit structure with a reduced amount of defects and methods for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12538467B2Jan 27, 2026
Vertical static random access memory and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12499933B2Dec 16, 2025
SRAM structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12477811B2Nov 18, 2025
High-k gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426226B2Sep 23, 2025
Macro and SRAM bit cell cooptimizatoin for performance (long/shortwordline combo SRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12374391B2Jul 29, 2025
Static random access memory with write assist adjustment
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349330B2Jul 1, 2025
Shared pick-up regions for memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336281B2Jun 17, 2025
Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080604B2Sep 3, 2024
Gate-all-around semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12063768B2Aug 13, 2024
Transistors with multiple threshold voltages
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12063766B2Aug 13, 2024
Vertical static random access memory and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040325B2Jul 16, 2024
Integrated circuit structure with a reduced amount of defects and methods for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027202B2Jul 2, 2024
SRAM structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12016169B2Jun 18, 2024
Optimized static random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11937416B2Mar 19, 2024
Memory device with improved margin and performance and methods of formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908866B2Feb 20, 2024
Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11869581B2Jan 9, 2024
Compensation word line driver
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862706B2Jan 2, 2024
High-K gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11791214B2Oct 17, 2023
Gate-all-around semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605423B2Mar 14, 2023
Static random access memory with write assist adjustment
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605638B2Mar 14, 2023
Transistors with multiple threshold voltages
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11600625B2Mar 7, 2023
Semiconductor device having an offset source/drain feature and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11475942B2Oct 18, 2022
SRAM structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349009B2May 31, 2022
High-k gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342019B2May 24, 2022
Compensation word line driver
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11329042B2May 10, 2022
Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11201158B2Dec 14, 2021
SRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11056181B2Jul 6, 2021
Strap cell design for static random access memory (SRAM) array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12087633B2Sep 10, 2024
Multi-gate field-effect transistors and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12080342B2Sep 3, 2024
Static random access memory (SRAM) with a pre- charge assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12250803B2Mar 11, 2025
Device and method for tuning threshold voltage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12249636B2Mar 11, 2025
Tuning gate lengths in multi-gate field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12219747B2Feb 4, 2025
Memory active region layout for improving memory performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11127746B2Sep 21, 2021
Fin-based strap cell structure for improving memory performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10854279B2Dec 1, 2020
Strap cell design for static random access memory (SRAM) array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10714484B2Jul 14, 2020
SRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10714168B2Jul 14, 2020
Strap cell design for static random access memory (SRAM) array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10515687B2Dec 24, 2019
Strap cell design for static random access memory (SRAM) array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10083970B2Sep 25, 2018
Static random access memory device with vertical FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52