Inventor
MADIA ORESTE
TW15 patents
⚠️ This page may combine multiple inventors who share the name “MADIA ORESTE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ASM IP HOLDING BV
10 patentsUS11170993B2Nov 9, 2021
Selective PEALD of oxide on dielectric
ASM IP HOLDING BV8 citations83
US11728164B2Aug 15, 2023
Selective PEALD of oxide on dielectric
ASM IP HOLDING BV4 citations74
US11664219B2May 30, 2023
Selective deposition of SiOC thin films
ASM IP HOLDING BV2 citations72
US11158500B2Oct 26, 2021
Plasma enhanced deposition processes for controlled formation of oxygen containing thin films
ASM IP HOLDING BV4 citations72
US11139163B2Oct 5, 2021
Selective deposition of SiOC thin films
ASM IP HOLDING BV3 citations72
US10607895B2Mar 31, 2020
Method for forming a semiconductor device structure comprising a gate fill metal
ASM IP HOLDING BV3 citations72
US12068156B2Aug 20, 2024
Selective deposition of SiOC thin films
ASM IP HOLDING BV0 citations62
US11776807B2Oct 3, 2023
Plasma enhanced deposition processes for controlled formation of oxygen containing thin films
ASM IP HOLDING BV0 citations62
US11501965B2Nov 15, 2022
Plasma enhanced deposition processes for controlled formation of metal oxide thin films
ASM IP HOLDING BV1 citations62
US11664222B2May 30, 2023
Atomic layer deposition of indium gallium zinc oxide
ASM IP HOLDING BV0 citations61
TAIWAN SEMICONDUCTOR MFG CO LTD
5 patentsUS12363970B2Jul 15, 2025
Germanium tin oxide-containing semiconductor device and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12021137B2Jun 25, 2024
Ni(Al)O p-type semiconductor via selective oxidation of NiAl and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12563989B2Feb 24, 2026
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12310063B2May 20, 2025
Method for forming semiconductor device with transistors on opposite sides of a dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12002860B2Jun 4, 2024
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52