P

Inventor

NOJIRI HIDETOSHI

JP34 patents
⚠️ This page may combine multiple inventors who share the name “NOJIRI HIDETOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CANON KK

25 patents
US6214738B1Apr 10, 2001

Method for producing narrow pores and structure having the narrow pores, and narrow pores and structure produced by the method

CANON KK55 citations96
US5140149AAug 18, 1992

Optical apparatus using wavelength selective photocoupler

CANON KK80 citations96
US4815027AMar 21, 1989

Optical operation apparatus for effecting parallel signal processing by detecting light transmitted through a filter in the form of a matrix

CANON KK56 citations96
US6666943B2Dec 23, 2003

Film transfer method

CANON KK52 citations93
US5613020AMar 18, 1997

Optical devices having a periodical current restraint layer and optical communication systems using the optical device

CANON KK47 citations93
US5220573AJun 15, 1993

Optical apparatus using wavelength selective photocoupler

CANON KK42 citations93
US6541386B2Apr 1, 2003

Method for producing a structure with narrow pores

CANON KK32 citations92
US5926497AJul 20, 1999

Diffraction grating with alternately-arranged different regions, optical semiconductor device with the diffraction grating, and apparatus and optical communication system using the same

CANON KK21 citations92
US4971415ANov 20, 1990

Multibeam emitting device

CANON KK26 citations92
US4799229AJan 17, 1989

Semiconductor laser array

CANON KK26 citations92
US4794611ADec 27, 1988

Semiconductor laser having superlattice structure

CANON KK29 citations92
US4794609ADec 27, 1988

Semiconductor laser provided with a plurality of lasers in the form of an array

CANON KK38 citations92
US4640585AFeb 3, 1987

Semiconductor thin film lens

CANON KK30 citations92
US7583413B2Sep 1, 2009

Signal output and image forming apparatus with method of judging sheet type by impact detection

CANON KK23 citations91
US5032710AJul 16, 1991

Photodetector to detect a light in different wavelength regions through clad layer having different thickness portions

CANON KK10 citations74
US4829534AMay 9, 1989

Semiconductor laser device having a semiconductor region for creating a depletion layer in a laser active layer for controlling current flow therethrough

CANON KK10 citations74
US4796067AJan 3, 1989

Semiconductor device having a superlattice structure

CANON KK9 citations74
US5298739AMar 29, 1994

Photodetector capable of sweeping out unwanted carriers and an optical communication system including the same

CANON KK11 citations73
US5196717AMar 23, 1993

Field effect transistor type photo-detector

CANON KK12 citations73
US4706254ANov 10, 1987

Semiconductor device and its fabrication

CANON KK13 citations73
US4553317ANov 19, 1985

Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors

CANON KK8 citations73
US5222163AJun 22, 1993

Integrated type optical node and optical information system using the same

CANON KK17 citations72
US5109444AApr 28, 1992

Integrated type optical node and optical information system using the same

CANON KK13 citations72
US7426062B2Sep 16, 2008

Signal output apparatus, image forming apparatus and information output apparatus

CANON KK4 citations61
US5287422AFeb 15, 1994

Integrated type optical node and optical information system using the same

CANON KK4 citations61

NISSAN MOTOR

8 patents

HISHITANI YOSHIKO

1 patent