Inventor
NOJIRI HIDETOSHI
JP34 patents
⚠️ This page may combine multiple inventors who share the name “NOJIRI HIDETOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
25 patentsUS6214738B1Apr 10, 2001
Method for producing narrow pores and structure having the narrow pores, and narrow pores and structure produced by the method
CANON KK55 citations96
US5140149AAug 18, 1992
Optical apparatus using wavelength selective photocoupler
CANON KK80 citations96
US4815027AMar 21, 1989
Optical operation apparatus for effecting parallel signal processing by detecting light transmitted through a filter in the form of a matrix
CANON KK56 citations96
US6666943B2Dec 23, 2003
Film transfer method
CANON KK52 citations93
US5613020AMar 18, 1997
Optical devices having a periodical current restraint layer and optical communication systems using the optical device
CANON KK47 citations93
US5220573AJun 15, 1993
Optical apparatus using wavelength selective photocoupler
CANON KK42 citations93
US6541386B2Apr 1, 2003
Method for producing a structure with narrow pores
CANON KK32 citations92
US5926497AJul 20, 1999
Diffraction grating with alternately-arranged different regions, optical semiconductor device with the diffraction grating, and apparatus and optical communication system using the same
CANON KK21 citations92
US4971415ANov 20, 1990
Multibeam emitting device
CANON KK26 citations92
US4799229AJan 17, 1989
Semiconductor laser array
CANON KK26 citations92
US4794611ADec 27, 1988
Semiconductor laser having superlattice structure
CANON KK29 citations92
US4794609ADec 27, 1988
Semiconductor laser provided with a plurality of lasers in the form of an array
CANON KK38 citations92
US4640585AFeb 3, 1987
Semiconductor thin film lens
CANON KK30 citations92
US7583413B2Sep 1, 2009
Signal output and image forming apparatus with method of judging sheet type by impact detection
CANON KK23 citations91
US5032710AJul 16, 1991
Photodetector to detect a light in different wavelength regions through clad layer having different thickness portions
CANON KK10 citations74
US4829534AMay 9, 1989
Semiconductor laser device having a semiconductor region for creating a depletion layer in a laser active layer for controlling current flow therethrough
CANON KK10 citations74
US4796067AJan 3, 1989
Semiconductor device having a superlattice structure
CANON KK9 citations74
US5298739AMar 29, 1994
Photodetector capable of sweeping out unwanted carriers and an optical communication system including the same
CANON KK11 citations73
US5196717AMar 23, 1993
Field effect transistor type photo-detector
CANON KK12 citations73
US4706254ANov 10, 1987
Semiconductor device and its fabrication
CANON KK13 citations73
US4553317ANov 19, 1985
Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors
CANON KK8 citations73
US5222163AJun 22, 1993
Integrated type optical node and optical information system using the same
CANON KK17 citations72
US5109444AApr 28, 1992
Integrated type optical node and optical information system using the same
CANON KK13 citations72
US7426062B2Sep 16, 2008
Signal output apparatus, image forming apparatus and information output apparatus
CANON KK4 citations61
US5287422AFeb 15, 1994
Integrated type optical node and optical information system using the same
CANON KK4 citations61
NISSAN MOTOR
8 patentsUS5681448AOct 28, 1997
Electrochemical process and system for etching semiconductor substrates
NISSAN MOTOR28 citations92
US5444351AAug 22, 1995
System and method for controlling induction motor applicable to electric motor-driven vehicle
NISSAN MOTOR36 citations92
US5167778ADec 1, 1992
Electrochemical etching method
NISSAN MOTOR34 citations92
US4962062AOct 9, 1990
Method of tightly joining two semiconductor substrates
NISSAN MOTOR38 citations92
US5173149ADec 22, 1992
Method of etching semiconductor substrate
NISSAN MOTOR19 citations74
US5172207ADec 15, 1992
Semiconductor wafer to be etched electrochemically
NISSAN MOTOR8 citations74
US4836888AJun 6, 1989
Method of chemically etching semiconductor substrate
NISSAN MOTOR7 citations73
US4828644AMay 9, 1989
Etching device for semiconductor wafers
NISSAN MOTOR0 citations42