Inventor
WATANABE KIMINORI
JP24 patents
Patents
24 patentsUS5105243AApr 14, 1992
Conductivity-modulation metal oxide field effect transistor with single gate structure
TOSHIBA KK165 citations99
US4672407AJun 9, 1987
Conductivity modulated MOSFET
TOSHIBA KK83 citations97
US5086332AFeb 4, 1992
Planar semiconductor device having high breakdown voltage
TOSHIBA KK60 citations96
US5068700ANov 26, 1991
Lateral conductivity modulated mosfet
TOSHIBA KK80 citations96
US4928155AMay 22, 1990
Lateral conductivity modulated MOSFET
TOSHIBA KK54 citations96
US4878957ANov 7, 1989
Dielectrically isolated semiconductor substrate
TOSHIBA KK90 citations96
US4782372ANov 1, 1988
Lateral conductivity modulated MOSFET
TOSHIBA KK33 citations96
US4680604AJul 14, 1987
Conductivity modulated MOS transistor device
TOSHIBA KK58 citations96
US4980743ADec 25, 1990
Conductivity-modulation metal oxide semiconductor field effect transistor
TOSHIBA KK42 citations93
US5286984AFeb 15, 1994
Conductivity modulated MOSFET
TOSHIBA KK27 citations92
US5093701AMar 3, 1992
Conductivity modulated mosfet
TOSHIBA KK22 citations92
US6489653B2Dec 3, 2002
Lateral high-breakdown-voltage transistor
TOSHIBA KK31 citations91
US6025622AFeb 15, 2000
Conductivity modulated MOSFET
TOSHIBA KK14 citations82
US5086323AFeb 4, 1992
Conductivity modulated mosfet
TOSHIBA KK18 citations82
US4881120ANov 14, 1989
Conductive modulated MOSFET
TOSHIBA KK16 citations82
US5780887AJul 14, 1998
Conductivity modulated MOSFET
TOSHIBA KK3 citations74
US5463231AOct 31, 1995
Method of operating thyristor with insulated gates
TOSHIBA KK13 citations74
US5428228AJun 27, 1995
Method of operating thyristor with insulated gates
TOSHIBA KK11 citations74
US5237186AAug 17, 1993
Conductivity-modulation metal oxide field effect transistor with single gate structure
TOSHIBA KK10 citations74
US5168333ADec 1, 1992
Conductivity-modulation metal oxide semiconductor field effect transistor
TOSHIBA KK18 citations74
US5124773AJun 23, 1992
Conductivity-modulation metal oxide semiconductor field effect transistor
TOSHIBA KK7 citations74
US6989568B2Jan 24, 2006
Lateral high-breakdown-voltage transistor having drain contact region
TOSHIBA KK6 citations72
US5315134AMay 24, 1994
Thyristor with insulated gate
TOSHIBA KK4 citations63
US6707104B2Mar 16, 2004
Lateral high-breakdown-voltage transistor
TOSHIBA KK4 citations61