Inventor
KIM TAE S
US19 patents
⚠️ This page may combine multiple inventors who share the name “KIM TAE S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
17 patentsUS5756375AMay 26, 1998
Semiconductor growth method with thickness control
TEXAS INSTRUMENTS INC94 citations98
US5610085AMar 11, 1997
Method of making a vertical FET using epitaxial overgrowth
TEXAS INSTRUMENTS INC145 citations98
US5468661ANov 21, 1995
Method of making power VFET device
TEXAS INSTRUMENTS INC88 citations96
US5342795AAug 30, 1994
Method of fabricating power VFET gate-refill
TEXAS INSTRUMENTS INC81 citations96
US5244829ASep 14, 1993
Organometallic vapor-phase epitaxy process using (CH3)3 As and CCl4 for improving stability of carbon-doped GaAs
TEXAS INSTRUMENTS INC88 citations96
US5231037AJul 27, 1993
Method of making a power VFET device using a p+ carbon doped gate layer
TEXAS INSTRUMENTS INC105 citations96
US6509574B2Jan 21, 2003
Optocouplers having integrated organic light-emitting diodes
TEXAS INSTRUMENTS INC59 citations95
US6008519ADec 28, 1999
Vertical transistor and method
TEXAS INSTRUMENTS INC73 citations93
US6506616B1Jan 14, 2003
Photolithographic method for fabricating organic light-emitting diodes
TEXAS INSTRUMENTS INC37 citations92
US5516722AMay 14, 1996
Method for increasing doping uniformity in a flow flange reactor
TEXAS INSTRUMENTS INC12 citations73
US5229333AJul 20, 1993
Method for improving the interface characteristics of CaF2 on silicon
TEXAS INSTRUMENTS INC9 citations73
US10249621B2Apr 2, 2019
Dummy contacts to mitigate plasma charging damage to gate dielectrics
TEXAS INSTRUMENTS INC5 citations70
US6409828B1Jun 25, 2002
Method and apparatus for achieving a desired thickness profile in a flow-flange reactor
TEXAS INSTRUMENTS INC1 citations52
US10956646B2Mar 23, 2021
Customizing circuit layout design rules for fabrication facilities
TEXAS INSTRUMENTS INC0 citations51
US7732324B2Jun 8, 2010
Semiconductor device having improved adhesion and reduced blistering between etch stop layer and dielectric layer
TEXAS INSTRUMENTS INC1 citations48
US7423344B2Sep 9, 2008
Bi-layer etch stop process for defect reduction and via stress migration improvement
TEXAS INSTRUMENTS INC0 citations48
US7199047B2Apr 3, 2007
Bi-layer etch stop process for defect reduction and via stress migration improvement
TEXAS INSTRUMENTS INC0 citations48