P

Inventor

KIM TAE S

US19 patents
⚠️ This page may combine multiple inventors who share the name “KIM TAE S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

17 patents
US5756375AMay 26, 1998

Semiconductor growth method with thickness control

TEXAS INSTRUMENTS INC94 citations98
US5610085AMar 11, 1997

Method of making a vertical FET using epitaxial overgrowth

TEXAS INSTRUMENTS INC145 citations98
US5468661ANov 21, 1995

Method of making power VFET device

TEXAS INSTRUMENTS INC88 citations96
US5342795AAug 30, 1994

Method of fabricating power VFET gate-refill

TEXAS INSTRUMENTS INC81 citations96
US5244829ASep 14, 1993

Organometallic vapor-phase epitaxy process using (CH3)3 As and CCl4 for improving stability of carbon-doped GaAs

TEXAS INSTRUMENTS INC88 citations96
US5231037AJul 27, 1993

Method of making a power VFET device using a p+ carbon doped gate layer

TEXAS INSTRUMENTS INC105 citations96
US6509574B2Jan 21, 2003

Optocouplers having integrated organic light-emitting diodes

TEXAS INSTRUMENTS INC59 citations95
US6008519ADec 28, 1999

Vertical transistor and method

TEXAS INSTRUMENTS INC73 citations93
US6506616B1Jan 14, 2003

Photolithographic method for fabricating organic light-emitting diodes

TEXAS INSTRUMENTS INC37 citations92
US5516722AMay 14, 1996

Method for increasing doping uniformity in a flow flange reactor

TEXAS INSTRUMENTS INC12 citations73
US5229333AJul 20, 1993

Method for improving the interface characteristics of CaF2 on silicon

TEXAS INSTRUMENTS INC9 citations73
US10249621B2Apr 2, 2019

Dummy contacts to mitigate plasma charging damage to gate dielectrics

TEXAS INSTRUMENTS INC5 citations70
US6409828B1Jun 25, 2002

Method and apparatus for achieving a desired thickness profile in a flow-flange reactor

TEXAS INSTRUMENTS INC1 citations52
US10956646B2Mar 23, 2021

Customizing circuit layout design rules for fabrication facilities

TEXAS INSTRUMENTS INC0 citations51
US7732324B2Jun 8, 2010

Semiconductor device having improved adhesion and reduced blistering between etch stop layer and dielectric layer

TEXAS INSTRUMENTS INC1 citations48
US7423344B2Sep 9, 2008

Bi-layer etch stop process for defect reduction and via stress migration improvement

TEXAS INSTRUMENTS INC0 citations48
US7199047B2Apr 3, 2007

Bi-layer etch stop process for defect reduction and via stress migration improvement

TEXAS INSTRUMENTS INC0 citations48

ESTRADA ANTHONY J

1 patent

(unassigned)

1 patent