Inventor
TAKAGI MIKIO
JP40 patents
⚠️ This page may combine multiple inventors who share the name “TAKAGI MIKIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
15 patentsUS4625678ADec 2, 1986
Apparatus for plasma chemical vapor deposition
FUJITSU LTD272 citations98
US4539068ASep 3, 1985
Vapor phase growth method
FUJITSU LTD147 citations98
US4581622AApr 8, 1986
UV erasable EPROM with UV transparent silicon oxynitride coating
FUJITSU LTD50 citations96
US4394401AJul 19, 1983
Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film
FUJITSU LTD77 citations96
US4532022AJul 30, 1985
Process of producing a semiconductor device
FUJITSU LTD41 citations92
US4503315AMar 5, 1985
Semiconductor device with fuse
FUJITSU LTD19 citations82
US4293590AOct 6, 1981
Process for high pressure oxidation of silicon
FUJITSU LTD23 citations82
US4275094AJun 23, 1981
Process for high pressure oxidation of silicon
FUJITSU LTD14 citations82
US4263087AApr 21, 1981
Process for producing epitaxial layers
FUJITSU LTD22 citations79
US3940288AFeb 24, 1976
Method of making a semiconductor device
FUJITSU LTD30 citations78
US4412388ANov 1, 1983
Method for drying semiconductor substrates
FUJITSU LTD10 citations73
US4293589AOct 6, 1981
Process for high pressure oxidation of silicon
FUJITSU LTD10 citations73
US4513026AApr 23, 1985
Method for coating a semiconductor device with a phosphosilicate glass
FUJITSU LTD15 citations72
US4487787ADec 11, 1984
Method of growing silicate glass layers employing chemical vapor deposition process
FUJITSU LTD6 citations63
US4210473AJul 1, 1980
Process for producing a semiconductor device
FUJITSU LTD4 citations60
F T L CO LTD
9 patentsUS6204194B1Mar 20, 2001
Method and apparatus for producing a semiconductor device
F T L CO LTD58 citations96
US5387557AFeb 7, 1995
Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
F T L CO LTD58 citations96
US6248672B1Jun 19, 2001
Method of producing a semiconductor device in a heating furnace having a reaction tube with a temperature-equalizing zone
F T L CO LTD22 citations92
US6159873ADec 12, 2000
Method for producing semiconductor device and production apparatus of semiconductor device
F T L CO LTD19 citations92
US5445676AAug 29, 1995
Method and apparatus for manufacturing semiconductor devices
F T L CO LTD34 citations92
US5407485AApr 18, 1995
Apparatus for producing semiconductor device and method for producing semiconductor device
F T L CO LTD40 citations92
US6793734B2Sep 21, 2004
Heating furnace and semiconductor wafer-holding jig assembly and process of manufacturing semiconductor devices
F T L CO LTD15 citations84
US6867147B2Mar 15, 2005
Method of surface treatment of semiconductor
F T L CO LTD10 citations74
US5643839AJul 1, 1997
Method for producing semiconductor device
F T L CO LTD7 citations74
SHINETSU CHEMICAL CO
4 patentsUS7691546B2Apr 6, 2010
Photomask blank and photomask
SHINETSU CHEMICAL CO10 citations84
US7618753B2Nov 17, 2009
Photomask blank, photomask and method for producing those
SHINETSU CHEMICAL CO8 citations84
US8007964B2Aug 30, 2011
Photomask blank and photomask
SHINETSU CHEMICAL CO2 citations62
US7556892B2Jul 7, 2009
Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
SHINETSU CHEMICAL CO3 citations62
SAMSUNG ELECTRONICS CO LTD
3 patentsUS6869500B2Mar 22, 2005
Method for processing a wafer and apparatus for performing the same
SAMSUNG ELECTRONICS CO LTD35 citations87
US6077573AJun 20, 2000
Plasma enhanced chemical vapor deposition methods of forming hemispherical grained silicon layers
SAMSUNG ELECTRONICS CO LTD18 citations84
US6686259B2Feb 3, 2004
Method for manufacturing solid state image pick-up device
SAMSUNG ELECTRONICS CO LTD5 citations59