Inventor
HORIUCHI MITSUAKI
JP24 patents
⚠️ This page may combine multiple inventors who share the name “HORIUCHI MITSUAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
22 patentsUS6737318B2May 18, 2004
Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
HITACHI LTD105 citations99
US5504029AApr 2, 1996
Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs
HITACHI LTD99 citations97
US5780882AJul 14, 1998
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD33 citations96
US5331191AJul 19, 1994
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD24 citations96
US5202275AApr 13, 1993
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD43 citations96
US5153685AOct 6, 1992
Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
HITACHI LTD72 citations96
US5060050AOct 22, 1991
Semiconductor integrated circuit device
HITACHI LTD63 citations96
US4853102AAug 1, 1989
Sputtering process and an apparatus for carrying out the same
HITACHI LTD97 citations96
US5930624AJul 27, 1999
Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring
HITACHI LTD22 citations92
US4547279AOct 15, 1985
Sputtering apparatus
HITACHI LTD47 citations87
US6548847B2Apr 15, 2003
Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal film
HITACHI LTD12 citations82
US6342412B1Jan 29, 2002
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD8 citations82
US6169324B1Jan 2, 2001
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD13 citations82
US6127255AOct 3, 2000
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD8 citations82
US5811316ASep 22, 1998
Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring
HITACHI LTD8 citations82
US5739589AApr 14, 1998
Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same
HITACHI LTD13 citations82
US4830891AMay 16, 1989
Method for selective deposition of metal thin film
HITACHI LTD20 citations81
US4979466ADec 25, 1990
Apparatus for selective deposition of metal thin film
HITACHI LTD19 citations79
US5753550AMay 19, 1998
Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
HITACHI LTD7 citations74
US5557147ASep 17, 1996
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD7 citations74
US6445055B2Sep 3, 2002
Semiconductor integrated circuit device and manufacturing method thereof
HITACHI LTD11 citations70
US5068710ANov 26, 1991
Semiconductor device with multilayer base contact
HITACHI LTD4 citations58