Inventor
CHEN CHING-HWA
US21 patents
⚠️ This page may combine multiple inventors who share the name “CHEN CHING-HWA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
9 patentsUS5368710ANov 29, 1994
Method of treating an article with a plasma apparatus in which a uniform electric field is induced by a dielectric window
LAM RES CORP135 citations99
US5356478AOct 18, 1994
Plasma cleaning method for removing residues in a plasma treatment chamber
LAM RES CORP892 citations99
US5226967AJul 13, 1993
Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
LAM RES CORP427 citations99
US5234526AAug 10, 1993
Window for microwave plasma processing device
LAM RES CORP449 citations98
US5198725AMar 30, 1993
Method of producing flat ecr layer in microwave plasma device and apparatus therefor
LAM RES CORP129 citations98
US6337277B1Jan 8, 2002
Clean chemistry low-k organic polymer etch
LAM RES CORP55 citations95
US5824605AOct 20, 1998
Gas dispersion window for plasma apparatus and method of use thereof
LAM RES CORP87 citations95
US5812361ASep 22, 1998
Dynamic feedback electrostatic wafer chuck
LAM RES CORP97 citations93
US6221792B1Apr 24, 2001
Metal and metal silicide nitridization in a high density, low pressure plasma reactor
LAM RES CORP40 citations88
PROMOS TECHNOLOGIES INC
4 patentsUS7122415B2Oct 17, 2006
Atomic layer deposition of interpoly oxides in a non-volatile memory device
PROMOS TECHNOLOGIES INC67 citations97
US7001810B2Feb 21, 2006
Floating gate nitridation
PROMOS TECHNOLOGIES INC22 citations92
US7910429B2Mar 22, 2011
Method of forming ONO-type sidewall with reduced bird's beak
PROMOS TECHNOLOGIES INC28 citations91
US7297597B2Nov 20, 2007
Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics for associated high voltage write transistors and gate dielectrics for low voltage logic transistors by using ISSG
PROMOS TECHNOLOGIES INC6 citations62
CHEN JIANN JONG
3 patentsPROMOS TECHNOLOGIES PTE LTD
3 patentsUS7851339B2Dec 14, 2010
Method of repairing deep subsurface defects in a silicon substrate that includes diffusing negatively charged ions into the substrate from a sacrificial oxide layer
PROMOS TECHNOLOGIES PTE LTD2 citations62
US7387972B2Jun 17, 2008
Reducing nitrogen concentration with in-situ steam generation
PROMOS TECHNOLOGIES PTE LTD4 citations60
US7807577B2Oct 5, 2010
Fabrication of integrated circuits with isolation trenches
PROMOS TECHNOLOGIES PTE LTD1 citations52