Inventor
KOSAKI KATSUYA
JP22 patents
Patents
22 patentsUS6391770B2May 21, 2002
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP88 citations98
US5998238ADec 7, 1999
Method of fabricating semiconductor device
MITSUBISHI ELECTRIC CORP90 citations98
US5853559ADec 29, 1998
Apparatus for electroplating a semiconductor substrate
MITSUBISHI ELECTRIC CORP101 citations98
US5441629AAug 15, 1995
Apparatus and method of electroplating
MITSUBISHI ELECTRIC CORP117 citations98
US6033540AMar 7, 2000
Plating apparatus for plating a wafer
MITSUBISHI ELECTRIC CORP38 citations96
US5272111ADec 21, 1993
Method for manufacturing semiconductor device contact
MITSUBISHI ELECTRIC CORP82 citations96
US6603190B2Aug 5, 2003
Semiconductor device
MITSUBISHI ELECTRIC CORP22 citations92
US6268619B1Jul 31, 2001
Semiconductor device with high aspect ratio via hole including solder repelling coating
MITSUBISHI ELECTRIC CORP36 citations92
US6245596B1Jun 12, 2001
Method of producing semiconductor device with heat dissipation metal layer and metal projections
MITSUBISHI ELECTRIC CORP26 citations92
US6210554B1Apr 3, 2001
Method of plating semiconductor wafer and plated semiconductor wafer
MITSUBISHI ELECTRIC CORP34 citations92
US5872396AFeb 16, 1999
Semiconductor device with plated heat sink
MITSUBISHI ELECTRIC CORP38 citations92
US5338967AAug 16, 1994
Semiconductor device structure with plated heat sink and supporting substrate
MITSUBISHI ELECTRIC CORP29 citations92
US5800667ASep 1, 1998
Apparatus for adhering wafer to supporting substrate
MITSUBISHI ELECTRIC CORP36 citations90
US6500325B2Dec 31, 2002
Method of plating semiconductor wafer and plated semiconductor wafer
MITSUBISHI ELECTRIC CORP5 citations74
US6008537ADec 28, 1999
Semiconductor device with heat dissipation metal layer and metal projections
MITSUBISHI ELECTRIC CORP12 citations74
US5770468AJun 23, 1998
Process for mounting a semiconductor chip to a chip carrier by exposing a solder layer to a reducing atmosphere
MITSUBISHI ELECTRIC CORP15 citations74
US5483092AJan 9, 1996
Semiconductor device having a via-hole with a void area for reduced cracking
MITSUBISHI ELECTRIC CORP17 citations74
US5200641AApr 6, 1993
Semiconductor device structure including bending-resistant radiating layer
MITSUBISHI ELECTRIC CORP18 citations74
US6335265B1Jan 1, 2002
Method for manufacturing semiconductor device and semiconductor device
MITSUBISHI ELECTRIC CORP7 citations73
US5786634AJul 28, 1998
Semiconductor device
MITSUBISHI ELECTRIC CORP5 citations62
US6992016B2Jan 31, 2006
Chemical processing method, and method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP2 citations57
US6849865B1Feb 1, 2005
Chemical processor
MITSUBISHI ELECTRIC CORP3 citations57