Inventor
GALLAGHER WILLIAM JOSEPH
US19 patents
⚠️ This page may combine multiple inventors who share the name “GALLAGHER WILLIAM JOSEPH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
13 patentsUS6104633AAug 15, 2000
Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices
IBM157 citations99
US5991193ANov 23, 1999
Voltage biasing for magnetic ram with magnetic tunnel memory cells
IBM305 citations99
US5841692ANov 24, 1998
Magnetic tunnel junction device with antiferromagnetically coupled pinned layer
IBM261 citations99
US5650958AJul 22, 1997
Magnetic tunnel junctions with controlled magnetic response
IBM521 citations99
US6226160B1May 1, 2001
Small area magnetic tunnel junction devices with low resistance and high magnetoresistance
IBM86 citations98
US6072718AJun 6, 2000
Magnetic memory devices having multiple magnetic tunnel junctions therein
IBM268 citations98
US5640343AJun 17, 1997
Magnetic memory array using magnetic tunnel junction devices in the memory cells
IBM1,220 citations98
US6368878B1Apr 9, 2002
Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices
IBM46 citations96
US6590750B2Jul 8, 2003
Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
IBM55 citations94
US6452764B1Sep 17, 2002
Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
IBM76 citations94
US5646095AJul 8, 1997
Selective insulation etching for fabricating superconductor microcircuits
IBM12 citations71
US7506236B2Mar 17, 2009
Techniques for operating semiconductor devices
IBM4 citations62
US6392156B1May 21, 2002
High current conductors and high field magnets using anisotropic superconductors
IBM2 citations59
TAIWAN SEMICONDUCTOR MFG CO LTD
6 patentsUS11289143B2Mar 29, 2022
SOT-MRAM with shared selector
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11723218B2Aug 8, 2023
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12022665B2Jun 25, 2024
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12322428B2Jun 3, 2025
SOT-MRAM with shared selector
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317513B2May 27, 2025
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11699474B2Jul 11, 2023
SOT-MRAM with shared selector
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62