Inventor
MASATO HIROYUKI
JP19 patents
⚠️ This page may combine multiple inventors who share the name “MASATO HIROYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
18 patentsUS6110813AAug 29, 2000
Method for forming an ohmic electrode
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD170 citations99
US6639255B2Oct 28, 2003
GaN-based HFET having a surface-leakage reducing cap layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD98 citations98
US6274889B1Aug 14, 2001
Method for forming ohmic electrode, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD109 citations98
US6787820B2Sep 7, 2004
Hetero-junction field effect transistor having an InGaAIN cap film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD39 citations92
US6774449B1Aug 10, 2004
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations92
US6531718B2Mar 11, 2003
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US7285806B2Oct 23, 2007
Semiconductor device having an active region formed from group III nitride
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations81
US6924516B2Aug 2, 2005
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations74
US6809352B2Oct 26, 2004
Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations74
US6593193B2Jul 15, 2003
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US5925903AJul 20, 1999
Field-effect transistors and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations73
US5905277AMay 18, 1999
Field-effect transistor and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations73
US5824575AOct 20, 1998
Semiconductor device and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73
US5585655ADec 17, 1996
Field-effect transistor and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations73
US6852612B2Feb 8, 2005
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6812505B2Nov 2, 2004
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US5486705AJan 23, 1996
Heterojunction field effect transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations58
US7307292B2Dec 11, 2007
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations52