Inventor
LIM JONG-HYOUNG
KR35 patents
⚠️ This page may combine multiple inventors who share the name “LIM JONG-HYOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
31 patentsUS5929696AJul 27, 1999
Circuit for converting internal voltage of semiconductor device
SAMSUNG ELECTRONICS CO LTD43 citations92
US6081460AJun 27, 2000
Integrated circuit devices having voltage level responsive mode-selection circuits therein and methods of operating same
SAMSUNG ELECTRONICS CO LTD20 citations91
US6111457AAug 29, 2000
Internal power supply circuit for use in a semiconductor device
SAMSUNG ELECTRONICS CO LTD26 citations90
US6617885B2Sep 9, 2003
Sense amplifiers having gain control circuits therein that inhibit signal oscillations
SAMSUNG ELECTRONICS CO LTD40 citations89
US6937534B2Aug 30, 2005
Integrated circuit memory device including delay locked loop circuit and delay locked loop control circuit and method of controlling delay locked loop circuit
SAMSUNG ELECTRONICS CO LTD22 citations86
US7184340B2Feb 27, 2007
Circuit and method for test mode entry of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD17 citations84
US6696860B2Feb 24, 2004
Variable voltage data buffers
SAMSUNG ELECTRONICS CO LTD17 citations84
US7397715B2Jul 8, 2008
Semiconductor memory device for testing redundancy cells
SAMSUNG ELECTRONICS CO LTD16 citations83
US7612573B2Nov 3, 2009
Probe sensing pads and methods of detecting positions of probe needles relative to probe sensing pads
SAMSUNG ELECTRONICS CO LTD10 citations81
US7054204B2May 30, 2006
Semiconductor device and method for controlling the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US6483373B1Nov 19, 2002
Input circuit having signature circuits in parallel in semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations74
US6140704AOct 31, 2000
Integrated circuit memory devices with improved twisted bit-line structures
SAMSUNG ELECTRONICS CO LTD9 citations74
US6822490B2Nov 23, 2004
Data output circuit for reducing skew of data signal
SAMSUNG ELECTRONICS CO LTD7 citations72
US6087887AJul 11, 2000
Signal routing circuits having selective high impedance and low impedance output states
SAMSUNG ELECTRONICS CO LTD7 citations72
US6028797AFeb 22, 2000
Multi-bank integrated circuit memory devices having cross-coupled isolation and precharge circuits therein
SAMSUNG ELECTRONICS CO LTD8 citations71
US9159398B2Oct 13, 2015
Memory core and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD5 citations68
US8987867B2Mar 24, 2015
Wafer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7675316B2Mar 9, 2010
Semiconductor memory device including on die termination circuit and on die termination method thereof
SAMSUNG ELECTRONICS CO LTD5 citations63
US7656741B2Feb 2, 2010
Row active time control circuit and a semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7639547B2Dec 29, 2009
Semiconductor memory device for independently controlling internal supply voltages and method of using the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7466616B2Dec 16, 2008
Bit line sense amplifier and method thereof
SAMSUNG ELECTRONICS CO LTD4 citations62
US7391254B2Jun 24, 2008
Circuit and method of generating internal supply voltage in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations62
US7554866B2Jun 30, 2009
Circuit and method of controlling input/output sense amplifier of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD3 citations61
US6084808AJul 4, 2000
Circuits and methods for burn-in of integrated circuits using potential differences between adjacent main word lines
SAMSUNG ELECTRONICS CO LTD2 citations58
US7646665B2Jan 12, 2010
Semiconductor memory device and burn-in test method thereof
SAMSUNG ELECTRONICS CO LTD5 citations56
US8015459B2Sep 6, 2011
Semiconductor memory device and method of performing a memory operation
SAMSUNG ELECTRONICS CO LTD1 citations52
US7657800B2Feb 2, 2010
Semiconductor memory device and method of performing a memory operation
SAMSUNG ELECTRONICS CO LTD1 citations52
US10431320B2Oct 1, 2019
Semiconductor memory device, method of testing the same and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US9053963B2Jun 9, 2015
Multiple well bias memory
SAMSUNG ELECTRONICS CO LTD1 citations50
US7747912B2Jun 29, 2010
Semiconductor memory device capable of arbitrarily setting the number of memory cells to be tested and related test method
SAMSUNG ELECTRONICS CO LTD1 citations48
US7940589B2May 10, 2011
Bit line sense amplifier of semiconductor memory device and control method thereof
SAMSUNG ELECTRONICS CO LTD0 citations42