P

Inventor

LIM JONG-HYOUNG

KR35 patents
⚠️ This page may combine multiple inventors who share the name “LIM JONG-HYOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US5929696AJul 27, 1999

Circuit for converting internal voltage of semiconductor device

SAMSUNG ELECTRONICS CO LTD43 citations92
US6081460AJun 27, 2000

Integrated circuit devices having voltage level responsive mode-selection circuits therein and methods of operating same

SAMSUNG ELECTRONICS CO LTD20 citations91
US6111457AAug 29, 2000

Internal power supply circuit for use in a semiconductor device

SAMSUNG ELECTRONICS CO LTD26 citations90
US6617885B2Sep 9, 2003

Sense amplifiers having gain control circuits therein that inhibit signal oscillations

SAMSUNG ELECTRONICS CO LTD40 citations89
US6937534B2Aug 30, 2005

Integrated circuit memory device including delay locked loop circuit and delay locked loop control circuit and method of controlling delay locked loop circuit

SAMSUNG ELECTRONICS CO LTD22 citations86
US7184340B2Feb 27, 2007

Circuit and method for test mode entry of a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD17 citations84
US6696860B2Feb 24, 2004

Variable voltage data buffers

SAMSUNG ELECTRONICS CO LTD17 citations84
US7397715B2Jul 8, 2008

Semiconductor memory device for testing redundancy cells

SAMSUNG ELECTRONICS CO LTD16 citations83
US7612573B2Nov 3, 2009

Probe sensing pads and methods of detecting positions of probe needles relative to probe sensing pads

SAMSUNG ELECTRONICS CO LTD10 citations81
US7054204B2May 30, 2006

Semiconductor device and method for controlling the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US6483373B1Nov 19, 2002

Input circuit having signature circuits in parallel in semiconductor device

SAMSUNG ELECTRONICS CO LTD12 citations74
US6140704AOct 31, 2000

Integrated circuit memory devices with improved twisted bit-line structures

SAMSUNG ELECTRONICS CO LTD9 citations74
US6822490B2Nov 23, 2004

Data output circuit for reducing skew of data signal

SAMSUNG ELECTRONICS CO LTD7 citations72
US6087887AJul 11, 2000

Signal routing circuits having selective high impedance and low impedance output states

SAMSUNG ELECTRONICS CO LTD7 citations72
US6028797AFeb 22, 2000

Multi-bank integrated circuit memory devices having cross-coupled isolation and precharge circuits therein

SAMSUNG ELECTRONICS CO LTD8 citations71
US9159398B2Oct 13, 2015

Memory core and semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD5 citations68
US8987867B2Mar 24, 2015

Wafer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7675316B2Mar 9, 2010

Semiconductor memory device including on die termination circuit and on die termination method thereof

SAMSUNG ELECTRONICS CO LTD5 citations63
US7656741B2Feb 2, 2010

Row active time control circuit and a semiconductor memory device having the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7639547B2Dec 29, 2009

Semiconductor memory device for independently controlling internal supply voltages and method of using the same

SAMSUNG ELECTRONICS CO LTD6 citations62
US7466616B2Dec 16, 2008

Bit line sense amplifier and method thereof

SAMSUNG ELECTRONICS CO LTD4 citations62
US7391254B2Jun 24, 2008

Circuit and method of generating internal supply voltage in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD6 citations62
US7554866B2Jun 30, 2009

Circuit and method of controlling input/output sense amplifier of a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD3 citations61
US6084808AJul 4, 2000

Circuits and methods for burn-in of integrated circuits using potential differences between adjacent main word lines

SAMSUNG ELECTRONICS CO LTD2 citations58
US7646665B2Jan 12, 2010

Semiconductor memory device and burn-in test method thereof

SAMSUNG ELECTRONICS CO LTD5 citations56
US8015459B2Sep 6, 2011

Semiconductor memory device and method of performing a memory operation

SAMSUNG ELECTRONICS CO LTD1 citations52
US7657800B2Feb 2, 2010

Semiconductor memory device and method of performing a memory operation

SAMSUNG ELECTRONICS CO LTD1 citations52
US10431320B2Oct 1, 2019

Semiconductor memory device, method of testing the same and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US9053963B2Jun 9, 2015

Multiple well bias memory

SAMSUNG ELECTRONICS CO LTD1 citations50
US7747912B2Jun 29, 2010

Semiconductor memory device capable of arbitrarily setting the number of memory cells to be tested and related test method

SAMSUNG ELECTRONICS CO LTD1 citations48
US7940589B2May 10, 2011

Bit line sense amplifier of semiconductor memory device and control method thereof

SAMSUNG ELECTRONICS CO LTD0 citations42

LIM JONG HYOUNG

2 patents

JOO JAE HOON

1 patent

LEE MYUNG-JAE

1 patent