Inventor

LANGDON STEVEN

DE7 patents

⚠️ This page may combine multiple inventors who share the name “LANGDON STEVEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FLACHOWSKY STEFAN

2 patents

US8501601B2Aug 6, 2013

Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloy

FLACHOWSKY STEFAN6 citations72

US8586440B2Nov 19, 2013

Methods for fabricating integrated circuits using non-oxidizing resist removal

FLACHOWSKY STEFAN1 citations51

SCHEIPER THILO

1 patent

US9048336B2Jun 2, 2015

Reduced threshold voltage-width dependency in transistors comprising high-k metal gate electrode structures

SCHEIPER THILO4 citations71

GLOBALFOUNDRIES INC

1 patent

US9425052B2Aug 23, 2016

Reduced threshold voltage-width dependency in transistors comprising high-K metal gate electrode structures

GLOBALFOUNDRIES INC2 citations61

GLOBALFOUNDRIES US INC

1 patent

US12328926B1Jun 10, 2025

Structures for a field-effect transistor that include a spacer structure

GLOBALFOUNDRIES US INC0 citations46

LANGDON STEVEN

1 patent

US8508001B2Aug 13, 2013

Semiconductor device with work function adjusting layer having varied thickness in a gate width direction and methods of making same

LANGDON STEVEN0 citations44

HOENTSCHEL JAN

1 patent

US8664068B2Mar 4, 2014

Low-diffusion drain and source regions in CMOS transistors for low power/high performance applications

HOENTSCHEL JAN0 citations41