Inventor
JUNG HYUNG-SUK
KR40 patents
⚠️ This page may combine multiple inventors who share the name “JUNG HYUNG-SUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
36 patentsUS7651729B2Jan 26, 2010
Method of fabricating metal silicate layer using atomic layer deposition technique
SAMSUNG ELECTRONICS CO LTD61 citations97
US6875678B2Apr 5, 2005
Post thermal treatment methods of forming high dielectric layers in integrated circuit devices
SAMSUNG ELECTRONICS CO LTD32 citations93
US7547951B2Jun 16, 2009
Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD36 citations92
US7494940B2Feb 24, 2009
Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices
SAMSUNG ELECTRONICS CO LTD16 citations92
US7037863B2May 2, 2006
Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices
SAMSUNG ELECTRONICS CO LTD15 citations92
US11322578B2May 3, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations84
US7952118B2May 31, 2011
Semiconductor device having different metal gate structures
SAMSUNG ELECTRONICS CO LTD14 citations84
US7829953B2Nov 9, 2010
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7576395B2Aug 18, 2009
Dual gate stack CMOS structure with different dielectrics
SAMSUNG ELECTRONICS CO LTD11 citations84
US7396777B2Jul 8, 2008
Method of fabricating high-k dielectric layer having reduced impurity
SAMSUNG ELECTRONICS CO LTD10 citations84
US11043553B2Jun 22, 2021
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD6 citations83
US10978552B2Apr 13, 2021
Semiconductor devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations83
US10559687B2Feb 11, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations83
US7586159B2Sep 8, 2009
Semiconductor devices having different gate dielectrics and methods for manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations83
US7919820B2Apr 5, 2011
CMOS semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD16 citations82
US9035398B2May 19, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations81
US7615830B2Nov 10, 2009
Transistors with multilayered dielectric films
SAMSUNG ELECTRONICS CO LTD5 citations74
US11728372B2Aug 15, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US10991574B2Apr 27, 2021
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations73
US9218977B2Dec 22, 2015
Fabricating method of a semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations73
US10529817B2Jan 7, 2020
Semiconductor devices having multi-threshold voltage
SAMSUNG ELECTRONICS CO LTD3 citations72
US7514310B2Apr 7, 2009
Dual work function metal gate structure and related method of manufacture
SAMSUNG ELECTRONICS CO LTD7 citations72
US9034714B2May 19, 2015
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations63
US8013402B2Sep 6, 2011
Transistors with multilayered dielectric films
SAMSUNG ELECTRONICS CO LTD3 citations63
US12125872B2Oct 22, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12074023B2Aug 27, 2024
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11682555B2Jun 20, 2023
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11588012B2Feb 21, 2023
Semiconductor devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10566433B2Feb 18, 2020
Semiconductor devices having transistors with different work function layers
SAMSUNG ELECTRONICS CO LTD1 citations62
US7588989B2Sep 15, 2009
Dielectric multilayer structures of microelectronic devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations62
US7323419B2Jan 29, 2008
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations62
US11929389B2Mar 12, 2024
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations61
US7745887B2Jun 29, 2010
Dual work function metal gate structure and related method of manufacture
SAMSUNG ELECTRONICS CO LTD4 citations61
US8970014B2Mar 3, 2015
Semiconductor devices with dielectric layers
SAMSUNG ELECTRONICS CO LTD0 citations52
US9793399B2Oct 17, 2017
Semiconductor device having insulating pattern and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US7767512B2Aug 3, 2010
Methods of manufacturing a semiconductor device including CMOS transistor having different PMOS and NMOS gate electrode structures
SAMSUNG ELECTRONICS CO LTD0 citations41