P

Inventor

JUNG HYUNG-SUK

KR40 patents
⚠️ This page may combine multiple inventors who share the name “JUNG HYUNG-SUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

36 patents
US7651729B2Jan 26, 2010

Method of fabricating metal silicate layer using atomic layer deposition technique

SAMSUNG ELECTRONICS CO LTD61 citations97
US6875678B2Apr 5, 2005

Post thermal treatment methods of forming high dielectric layers in integrated circuit devices

SAMSUNG ELECTRONICS CO LTD32 citations93
US7547951B2Jun 16, 2009

Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD36 citations92
US7494940B2Feb 24, 2009

Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices

SAMSUNG ELECTRONICS CO LTD16 citations92
US7037863B2May 2, 2006

Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices

SAMSUNG ELECTRONICS CO LTD15 citations92
US11322578B2May 3, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations84
US7952118B2May 31, 2011

Semiconductor device having different metal gate structures

SAMSUNG ELECTRONICS CO LTD14 citations84
US7829953B2Nov 9, 2010

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US7576395B2Aug 18, 2009

Dual gate stack CMOS structure with different dielectrics

SAMSUNG ELECTRONICS CO LTD11 citations84
US7396777B2Jul 8, 2008

Method of fabricating high-k dielectric layer having reduced impurity

SAMSUNG ELECTRONICS CO LTD10 citations84
US11043553B2Jun 22, 2021

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD6 citations83
US10978552B2Apr 13, 2021

Semiconductor devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations83
US10559687B2Feb 11, 2020

Semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations83
US7586159B2Sep 8, 2009

Semiconductor devices having different gate dielectrics and methods for manufacturing the same

SAMSUNG ELECTRONICS CO LTD13 citations83
US7919820B2Apr 5, 2011

CMOS semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations82
US9035398B2May 19, 2015

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations81
US7615830B2Nov 10, 2009

Transistors with multilayered dielectric films

SAMSUNG ELECTRONICS CO LTD5 citations74
US11728372B2Aug 15, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations73
US10991574B2Apr 27, 2021

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD3 citations73
US9218977B2Dec 22, 2015

Fabricating method of a semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations73
US10529817B2Jan 7, 2020

Semiconductor devices having multi-threshold voltage

SAMSUNG ELECTRONICS CO LTD3 citations72
US7514310B2Apr 7, 2009

Dual work function metal gate structure and related method of manufacture

SAMSUNG ELECTRONICS CO LTD7 citations72
US9034714B2May 19, 2015

Method for fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations63
US8013402B2Sep 6, 2011

Transistors with multilayered dielectric films

SAMSUNG ELECTRONICS CO LTD3 citations63
US12125872B2Oct 22, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12074023B2Aug 27, 2024

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11682555B2Jun 20, 2023

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11588012B2Feb 21, 2023

Semiconductor devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US10566433B2Feb 18, 2020

Semiconductor devices having transistors with different work function layers

SAMSUNG ELECTRONICS CO LTD1 citations62
US7588989B2Sep 15, 2009

Dielectric multilayer structures of microelectronic devices and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations62
US7323419B2Jan 29, 2008

Method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations62
US11929389B2Mar 12, 2024

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations61
US7745887B2Jun 29, 2010

Dual work function metal gate structure and related method of manufacture

SAMSUNG ELECTRONICS CO LTD4 citations61
US8970014B2Mar 3, 2015

Semiconductor devices with dielectric layers

SAMSUNG ELECTRONICS CO LTD0 citations52
US9793399B2Oct 17, 2017

Semiconductor device having insulating pattern and method of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations49
US7767512B2Aug 3, 2010

Methods of manufacturing a semiconductor device including CMOS transistor having different PMOS and NMOS gate electrode structures

SAMSUNG ELECTRONICS CO LTD0 citations41

LIM HA-JIN

2 patents

KIM WEON-HONG

1 patent

KIM JONG-PYO

1 patent