Inventor
LIN SEAN X
US12 patents
⚠️ This page may combine multiple inventors who share the name “LIN SEAN X”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
10 patentsUS9853110B2Dec 26, 2017
Method of forming a gate contact structure for a semiconductor device
GLOBALFOUNDRIES INC13 citations84
US10109490B1Oct 23, 2018
Cobalt interconnects formed by selective bottom-up fill
GLOBALFOUNDRIES INC8 citations83
US9520321B2Dec 13, 2016
Integrated circuits and methods for fabricating integrated circuits with self-aligned vias
GLOBALFOUNDRIES INC11 citations83
US8932934B2Jan 13, 2015
Methods of self-forming barrier integration with pore stuffed ULK material
GLOBALFOUNDRIES INC6 citations83
US8778789B2Jul 15, 2014
Methods for fabricating integrated circuits having low resistance metal gate structures
GLOBALFOUNDRIES INC13 citations82
US9087881B2Jul 21, 2015
Electroless fill of trench in semiconductor structure
GLOBALFOUNDRIES INC4 citations72
US8691689B1Apr 8, 2014
Methods for fabricating integrated circuits having low resistance device contacts
GLOBALFOUNDRIES INC5 citations71
US9054052B2Jun 9, 2015
Methods for integration of pore stuffing material
GLOBALFOUNDRIES INC3 citations62
US10727120B2Jul 28, 2020
Controlling back-end-of-line dimensions of semiconductor devices
GLOBALFOUNDRIES INC0 citations52
US9263327B2Feb 16, 2016
Minimizing void formation in semiconductor vias and trenches
GLOBALFOUNDRIES INC1 citations51
LIN SEAN X
2 patentsUS8517769B1Aug 27, 2013
Methods of forming copper-based conductive structures on an integrated circuit device
LIN SEAN X14 citations82
US8673766B2Mar 18, 2014
Methods of forming copper-based conductive structures by forming a copper-based seed layer having an as-deposited thickness profile and thereafter performing an etching process and electroless copper deposition
LIN SEAN X2 citations60