Inventor
YANG STEVE WEIYI
CN20 patents
Patents
20 patentsUS10147732B1Dec 4, 2018
Source structure of three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD66 citations98
US10593690B2Mar 17, 2020
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD21 citations94
US10930663B2Feb 23, 2021
Interconnect structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD14 citations85
US11211397B2Dec 28, 2021
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD6 citations84
US11031333B2Jun 8, 2021
Three-dimensional memory devices having a plurality of NAND strings
YANGTZE MEMORY TECH CO LTD8 citations84
US10923491B2Feb 16, 2021
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD4 citations84
US10679721B2Jun 9, 2020
Structure and method for testing three-dimensional memory device
YANGTZE MEMORY TECH CO LTD9 citations83
US11758732B2Sep 12, 2023
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD3 citations73
US11527547B2Dec 13, 2022
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD3 citations73
US10804279B2Oct 13, 2020
Source structure of three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD4 citations73
US10998079B2May 4, 2021
Structure and method for testing three-dimensional memory device
YANGTZE MEMORY TECH CO LTD2 citations72
US12142575B2Nov 12, 2024
Staircase etch control in forming three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12137567B2Nov 5, 2024
Interconnect structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations62
US12137568B2Nov 5, 2024
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11805646B2Oct 31, 2023
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11699657B2Jul 11, 2023
Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layer
YANGTZE MEMORY TECH CO LTD0 citations62
US11462474B2Oct 4, 2022
Three-dimensional memory devices having a plurality of NAND strings
YANGTZE MEMORY TECH CO LTD0 citations62
US11264397B2Mar 1, 2022
Source structure of three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US10522474B2Dec 31, 2019
Staircase etch control in forming three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations62
US10423176B2Sep 24, 2019
Low-dropout regulators
YANGTZE MEMORY TECH CO LTD1 citations62