Inventor

YANG SIMON SHI-NING

CN22 patents

⚠️ This page may combine multiple inventors who share the name “YANG SIMON SHI-NING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANG SIMON SHI-NING

YANGTZE MEMORY TECH CO LTD

Three-dimensional memory devices having a plurality of NAND strings

Source structure of three-dimensional memory device and method for forming the same

Hybrid bonding contact structure of three-dimensional memory device

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory devices having a plurality of NAND strings

Hybrid bonding contact structure of three-dimensional memory device

Structure and method for testing three-dimensional memory device

Memory devices having vertical transistors and methods for forming the same

Hybrid bonding contact structure of three-dimensional memory device

Hybrid bonding contact structure of three-dimensional memory device

Source structure of three-dimensional memory device and method for forming the same

Structure and method for testing three-dimensional memory device

Staircase etch control in forming three-dimensional memory device

Hybrid bonding contact structure of three-dimensional memory device

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layer

Three-dimensional memory devices having a plurality of NAND strings

Source structure of three-dimensional memory device and method for forming the same

Staircase etch control in forming three-dimensional memory device

Low-dropout regulators

CHARTERED SEMICONDUCTOR MFG

Method for processing IC designs for different metal BEOL processes

Method for using a Cu BEOL process to fabricate an integrated circuit (IC) originally having an al design