Inventor
SHIM WON-BO
KR16 patents
⚠️ This page may combine multiple inventors who share the name “SHIM WON-BO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
15 patentsUS9704596B1Jul 11, 2017
Method of detecting erase fail word-line in non-volatile memory device
SAMSUNG ELECTRONICS CO LTD23 citations92
US10825532B2Nov 3, 2020
Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations73
US10658043B2May 19, 2020
Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations73
US10510771B2Dec 17, 2019
Three-dimensional memory devices having plurality of vertical channel structures
SAMSUNG ELECTRONICS CO LTD3 citations73
US9824765B2Nov 21, 2017
Memory device, memory system, method of operating the memory device, and method of operating the memory system
SAMSUNG ELECTRONICS CO LTD6 citations73
US10424381B2Sep 24, 2019
Nonvolatile memory device and program method of the same
SAMSUNG ELECTRONICS CO LTD1 citations71
US11783900B2Oct 10, 2023
Erase method of non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11367487B2Jun 21, 2022
Nonvolatile memory device and erase method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US11056194B2Jul 6, 2021
Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12125538B2Oct 22, 2024
Nonvolatile memory device and program method of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11355195B2Jun 7, 2022
Nonvolatile memory device and program method of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US10971232B2Apr 6, 2021
Nonvolatile memory device and program method of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US10680013B2Jun 9, 2020
Three-dimensional memory devices having plurality of vertical channel structures
SAMSUNG ELECTRONICS CO LTD0 citations52
US11322205B2May 3, 2022
Non-volatile memory device and method for programming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US11200952B2Dec 14, 2021
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51